The semiconductor component of InGaN-based blue light-emitting diodes (LEDs)
emits white light when combined with a yellow phosphor mixture. However,
owing to the lattice dislocations and defect points in GaN, it exhibits a
high thermal resistance, which leads to heat accumulation and an increase in
temperature. This is problematic as overheating causes LEDs to produce dark
spots and lines and reduces the luminous flux and optical power of
high-power LEDs. In this study, we propose a variety of optimal structures
for heat-transfer modules and apply the proposed architectures in the
assembly of high-power LED modules. First, the high-power LED substrate was
coated with a film of aluminum nitride (AlN). Then, copper fins were
connected to the vacant spaces in the circuit boards to increase the surface
area of the heat-transfer region. The Taguchi method was used to identify
the optimal substrate thickness, fin arrangement, and fin depth for the
effective heat dissipation in a 12-W high-power LED. A dielectric layer was
grown on the surface of the AlN film to serve as a passivation layer to
insulate the patient. The passivation layer reduces the physical damage
caused by thermal stress, thereby improving the service life and
characteristics of heat-transfer modules. The proposed design not only
yields a stable LED substrate (with low thermal stress) but also induces
reliable heat transfer.
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