Abstract:The semiconductor component of InGaN-based blue light-emitting diodes (LEDs)
emits white light when combined with a yellow phosphor mixture. However,
owing to the lattice dislocations and defect points in GaN, it exhibits a
high thermal resistance, which leads to heat accumulation and an increase in
temperature. This is problematic as overheating causes LEDs to produce dark
spots and lines and reduces the luminous flux and optical power of
high-power LEDs. In this study, we propose a variety … Show more
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