Al0.12GaN/GaN membrane-type photodetectors
(M-PD) were
separated from the Si substrates through a chemical lift-off process.
High photocurrent, low dark current, and high responsivity properties
were observed in the M-PD structure compared to that on the Si substrate.
Lattice-mismatch-induced tensile strain on the Al0.12GaN
layer was enlarged in the M-PD structure and was analyzed by the photoluminescence
and Raman spectra. From the simulation results, the energy band bending
induced the potential barrier height at the AlN/air separated surface
to deplete the surface states and suppress the leakage current. The
strain in the AlGaN/GaN structures was manipulated by removing the
Si substrate and roughening the AlN surface. The membrane-type ultraviolet
photodetector consisted of the AlGaN/GaN two-dimensional electron
gas channel and the large tensile strain at the Al0.12GaN
layer, which can be used for high-efficiency optoelectronic applications.
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