This study investigated Co40Fe40W20 single-layer thin films according to their corresponding structure, grain size, contact angle, and surface energy characteristics. Co40Fe40W20 alloy thin films of different thicknesses, ranging from 10 to 50 nm, were sputtered on Si(100) substrates by DC magnetron sputtering. The thin films were annealed under three conditions: as-deposited, 250 °C, and 350 °C temperatures, respectively. The Scherrer equation was applied to calculate the grain size of Co40Fe40W20 thin films. The results show that the grain size of CoFe(110) increased simultaneously with the increase of post-annealing temperature, suggesting that the crystallinity of Co40Fe40W20 thin films increased with the post-annealing temperature. Moreover, the contact angles of all Co40Fe40W20 thin films were all less than 90°, suggesting that Co40Fe40W20 thin films show changes in the direction of higher hydrophilicity. However, we found that their contact angles decreased as the grain size of CoFe increased. Finally, the Young equation was applied to calculate the surface energy of Co40Fe40W20 thin films. After post-annealing, the surface energy of Co40Fe40W20 thin films increased with the rising post-annealing temperature. This is the highest value of surface energy observed for 350 °C. In addition, the surface energy increased as the contact angle of Co40Fe40W20 thin films decreased. The high surface energy means stronger adhesion, allowing the formation of multilayer thin films with magnetic tunneling junctions (MTJs). The sheet resistance of the as-deposited and thinner CoFeW films is larger than annealed and thicker CoFeW films. When the thickness is from 10 nm to 50 nm, the hardness and Young’s modulus of the CoFeW film also show a saturation trend.
The aim of this work is to investigate the effect of annealing and thickness on various physical properties in Co40Fe40Yb20 thin films. X-ray diffraction (XRD) was used to determine the amorphous structure of Co40Fe40Yb20 films. The maximum surface energy of 40 nm thin films at 300 °C is 34.54 mJ/mm2. The transmittance and resistivity decreased significantly as annealing temperatures and thickness increased. At all conditions, the 10 nm film had the highest hardness. The average hardness decreased as thickness increased, as predicted by the Hall–Petch effect. The highest low-frequency alternative-current magnetic susceptibility (χac) value was discovered when the film was annealed at 200 °C with 50 nm, and the optimal resonance frequency (ƒres) was in the low frequency range, indicating that the film has good applicability in the low frequency range. At annealed 200 °C and 50 nm, the maximum saturation magnetization (Ms) was discovered. Thermal disturbance caused the Ms to decrease when the temperature was raised to 300 °C. The optimum process conditions determined in this study are 200 °C and 50 nm, with the highest Ms, χac, strong adhesion, and low resistivity, which are suitable for magnetic applications, based on magnetic properties and surface energy.
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