Radiation-tolerant materials, sensors and electronics can enable lightweight space subsystems with reduced packaging requirements and increased operation lifetimes. Such technology can be used within extreme harsh environments related to space exploration, radiation medicine and power generation (combustion and nuclear). Gallium nitride (GaN), a ceramic semiconductor material, is a candidate material due to its stability within high-radiation, high-temperature and chemically corrosive environments. In addition, the wide bandgap of GaN (3.4 eV) can be leveraged for ultraviolet (UV) wavelength photodetection. In metal-semiconductor-metal (MSM) photodetector architectures using Schottky contacts, transparent electrodes (e.g., graphene) can increase sensitivity and improve overall device response. Here we present fabrication and characterization of GaN-based UV photodetectors using graphene electrodes irradiated up to 200 krad total ionizing dose (TID) then tested under UV light and dark conditions. For current-voltage measurements taken at 90, 120 and 200 krad TID, the current-voltage response does not vary significantly. From 90 to 120 krad TID, the responsivity shifts by 2% before dropping off at 200 krad TID. These initial findings suggest that graphene/GaN MSM UV photodetectors can provide robust operation within extreme harsh environments.
The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.
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