Characterization of irradiated and temperature-compensated gallium nitride surface acoustic wave resonators

Shankar, Ashwin; Angadi, Chetan; Bhattacharya, Sharmila; Lin, Chih‐Ming; Senesky, Debbie G.

doi:10.1117/12.2050838

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2014

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“…Other groups have also reported on lower-frequency GaN BAW [5] and surface acoustic wave (SAW) resonators [6], and most noticeably on AlGaN/GaN resonant body transistors [7]. In [8], we demonstrated an 8.7 GHz resonator integrated with an on-chip AlGaN/GaN HEMT (Fig.…”

Section: Introductionmentioning

confidence: 70%

A Temperature-Compensated Gallium Nitride Micromechanical Resonator

Ansari

Rais‐Zadeh

2014

IEEE Electron Device Lett.

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A GaN bulk acoustic wave resonator is presented in this letter, showing fundamental thickness-mode resonance at 2.18 GHz, with a quality factor (Q) of 655 and a coupling coefficient (k t 2 ) of 1%. The resonator is integrated with an AlGaN/GaN high electron mobility transistor (HEMT); the integrated resonator/HEMT structure is coated with a silicon dioxide (SiO 2 ) passivation layer. It is shown that a 400-nm-thick SiO 2 layer reduces the temperature coefficient of frequency (TCF) of the GaN-based resonator by >50%, while improving Q and k t 2 of the fundamental thickness-mode resonance. The effect of SiO 2 passivation layer is studied on k t 2 , Q, and TCF of the device. Furthermore, the effects of temperature and input RF power on the resonator performance are characterized.

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