The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail.
die strength as the wafer become thinner. As the die thickness This paper characterizes the die strength of 4O.tm silicon reduces, die strength characterization is required to determine die with the intention to understand the behavior of the thin the die strength of thin die compared to thicker die. One of the die to prevent die crack during package assembly. Die strength improvement methods to prevent crack die at wafer dicing of is measured by three-point bending test conducted using the thin wafer is by using laser dicing instead of mechanical universal tensile tester and the three-point bending jig. At first, dicing method. Dicing of 4Qim thin wafer with mechanical * . . . .. '~~~~~dicin oroduces chi inL and crack due to generation of high a comparison of the influence between mechanical and laser gpppg g g dicing method to the die strength of 40pm, 70pm and 100pm mechanical friction as the sawing blade cut through the thin silicon die are investigated. Next, the effect of dry plasma silicon wafer. On the other hand, laser dicing method uses etching on the die sidewall towards the die strength of 4..m high frequency laser pulse to cut through the silicon wafer silicon die is also being explored. Apart from the die strength which does not create mechanical friction at the sidewall of the deflection of the die before breaking is measured to study wae ding Thusd laser die crack of thon the flexibility of 40utm silicon die. In addition, surface morphology and silicon fractography are analyzed to examine creates heat affected zone (HAZ) at the die sidewall which is the surfaces of silicon die. Finally, the samples are subjected strength [5]. Due to this factor, to Raman spectroscopy to analyze the residual stress on the determination of the influence of laser dicing and mechanical die sidewall. This investigation reveals that the die strength is dicing towards the die strength is an important study. dependent on the dicing method and surface treatment after A simple and accepted method to characterize the die dicing. Even though laser dicing weaken the die strength by strength of silicon die is by using the three-point bending 7000 compares to mechanical dicing, the die strength of laser method [1, 2, 5]. This method is commonly used to measure dicing can be improved up to 37000 by the plasma sidewall the breaking force of brittle material such as silicon die. etching treatment. It is also observed that there is a correlation Three-point bending test is able to detect the decreased die between the fracture modes and the die strength. Laser sawn strength due to sidewall defects [5]. In three-point bending die break into two pieces which is the typical characteristic of test, the silicon die is supported by two stationary beams while weak silicon die while mechanical sawn and plasma etched the third beam will be pressed onto the die until it breaks. die break into multiple pieces which is the typical When the silicon die is subjected to three-point bending, the characteristic of strong silicon die. In addition, mic...
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