In this work, the effects of the SiO x interface layer grown by exposure in air on the performance of planar hybrid n-Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solar cells are investigated. Compared to the cell with a hydrogen-terminated Si surface, the cell with an oxygen-terminated Si surface reveals improved characteristics in power conversion efficiency, increased from 10.44% to 13.31%. By introducing the SiO x , the wettability of the Si surface can be improved, allowing an effective spread of the PEDOT:PSS solution and thus a good contact between the PEDOT:PSS film and Si. More importantly, it can change the polarity of the Si surface from a negative dipole to a positive dipole, owing to the introduction of the SiO x interface. The Si energy band will bend up and give rise to a favorable band alignment between Si and PEDOT:PSS to promote carrier separation. These results could be potentially employed to further development of this simple, low-cost heterojunction solar cell.
A systematical investigation was carried out into the effects of the hole-transporting layer treatment of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on the performance of planar hybrid n-Si/PEDOT:PSS solar cells. Triton X-100 and ethylene glycol (EG) were chosen to improve the conductivity and surface morphology of the PEDOT:PSS film. It was found that the annealing temperature has a great influence on the PEDOT:PSS material properties and the corresponding device performance. By optimizing the annealing temperature, the conductivity of the PEDOT:PSS film doped with Triton X-100 and EG could be enhanced by a factor of more than three orders. And the corresponding device also shows record power conversion efficiency as high as 14.5% with an open circuit voltage of 0.627 V, a short circuit current of 32.6 mA/cm 2 , and a fill factor of 70.7%.
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