As an emerging ultrathin semiconductor material, Bi2O2Se exhibits prominent performances in electronics, optoelectronics, ultrafast optics, etc. However, until now, the in-plane growth of Bi2O2Se thin films is mostly fulfilled on atomically flat mica substrates with interfacial electrostatic forces setting obstacles for Bi2O2Se transfer to fabricate functional van der Waals heterostructures. In this work, controlled growth of inclined Bi2O2Se ultrathin films is realized with apparently reduced interfacial contact areas upon mica flakes. Consequently, the transfer of Bi2O2Se could be facile by overcoming weaker electrostatic interactions. From cross-sectional characterizations at the Bi2O2Se/mica interfaces, it is found that there are no oxide buffer layers in existence for both in-plane and inclined growths, while the un-neutralized charge density is apparently decreased for inclined films. By mechanical pressing, inclined Bi2O2Se could be transferred onto SiO2/Si substrates, and back-gated Bi2O2Se field effect transistors are fabricated, outperforming previously reported in-plane Bi2O2Se devices transferred with the assistance of corrosive acids and adhesive polymers. Furthermore, Bi2O2Se/graphene heterostructures are fulfilled by a probe tip to fabricate hybrid phototransistors with pristine interfaces, exhibiting highly efficient photoresponses. The results in this work demonstrate the potential of inclined Bi2O2Se to act as a building block for prospective van der Waals heterostructures.

Highly efficient metal/semiconductor/metal structured photodetectors were constructed based on Bi2O2Se thin films with lithography-free electrode fabrication.

While valley polarization with strong Zeeman splitting is the most prominent characteristic of two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors under magnetic fields, enhancement of the Zeeman splitting has been demonstrated by incorporating magnetic dopants into the host materials. Unlike Fe, Mn, and Co, V is a distinctive dopant for ferromagnetic semiconducting properties at room temperature with large Zeeman shifting of band edges. Nevertheless, little known is the excitons interacting with spin-polarized carriers in V-doped TMDs. Here, we report anomalous circularly polarized photoluminescence (CPL) in a V-doped WSe2 monolayer at room temperature. Excitons couple to V-induced spin-polarized holes to generate spin-selective positive trions, leading to differences in the populations of neutral excitons and trions between left and right CPL. Using transient absorption spectroscopy, we elucidate the origin of excitons and trions that are inherently distinct for defect-mediated and impurity-mediated trions. Ferromagnetic characteristics are further confirmed by the significant Zeeman splitting of nanodiamonds deposited on the V-doped WSe2 monolayer.

Bi2O2Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi2O2Se thin film-based device is not fully explored in the photodetecting area. Considering the fact that the electrical properties such as carrier mobility, work function, and energy band structure of Bi2O2Se are thickness-dependent, the in-plane Bi2O2Se homojunctions consisting of layers with different thicknesses are successfully synthesized by the chemical vapor deposition (CVD) method across the terraces on the mica substrates, where terraces are created in the mica surface layer peeling off process. In this way, effective internal electrical fields are built up along the Bi2O2Se homojunctions, exhibiting diode-like rectification behavior with an on/off ratio of 102, what is more, thus obtained photodetectors possess highly sensitive and ultrafast features, with a maximum photoresponsivity of 2.5 A/W and a lifetime of 4.8 μs. Comparing with the Bi2O2Se uniform thin films, the photo-electric conversion efficiency is greatly improved for the in-plane homojunctions.

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Integration of distinct materials to form heterostructures enables the proposal of new functional devices based on emergent physical phenomena beyond the properties of the constituent materials. The optical responses and electrical transport characteristics of heterostructures depend on the charge and exciton transfer (CT and ET) at the interfaces, determined by the interfacial energy level alignment. In this work, heterostructures consisting of aggregates of fluorescent molecules (DY1) and 2D semiconductor MoS 2 monolayers are fabricated. Photoluminescence spectra of DY1/MoS 2 show quenching of the DY1 emission and enhancement of the MoS 2 emission, indicating a strong electronic interaction between these two materials. Nanoscopic mappings of the light‐induced contact potential difference changes rule out the CT process at the interface. Using femtosecond transient absorption spectroscopy, the rapid interfacial ET process from DY1 aggregates to MoS 2 and a fourfold extension of the exciton lifetime in MoS 2 are elucidated. These results suggest that the integration of 2D inorganic semiconductors with fluorescent molecules can provide versatile approaches to engineer the physical characteristics of materials for both fundamental studies and novel optoelectronic device applications.

The microscopic stripe pillar is one of the most frequently adopted building blocks for hydrophobic substrates. However, at high temperatures the particles on the droplet surface readily evaporate and re-condense on the pillar sidewall, which makes the droplet highly unstable and undermines the overall hydrophobic performance of the pillar. In this work, molecular dynamics (MD) simulation of the simple liquid at a single stripe pillar edge defect is performed to characterize the droplet's critical wetting properties considering the evaporation-condensation effect. From the simulation results, the droplets slide down from the edge defect with a volume smaller than the critical value, which is attributed to the existence of the wetting layer on the stripe pillar sidewall. Besides, the analytical study of the pillar sidewall and wetting layer potential field distribution manifests the relation between the simulation parameters and the degree of the droplet pre-wetting, which agrees well with the MD simulation results.

Graphdiyne (GDY), a new 2D material, has recently proven excellent performance in photodetector applications due to its direct bandgap and high mobility. Different from the zero‐gap of graphene, these preeminent properties made GDY emerge as a rising star for solving the bottleneck of graphene‐based inefficient heterojunction. Herein, a highly effective graphdiyne/molybdenum (GDY/MoS2) type‐II heterojunction in a charge separation is reported toward a high‐performance photodetector. Characterized by robust electron repulsion of alkyne‐rich skeleton, the GDY based junction facilitates the effective electron–hole pairs separation and transfer. This results in significant suppression of Auger recombination up to six times at the GDY/MoS2 interface compared with the pristine materials owing to an ultrafast hot hole transfer from MoS2 to GDY. GDY/MoS2 device demonstrates notable photovoltaic behavior with a short‐circuit current of −1.3 × 10−5 A and a large open‐circuit voltage of 0.23 V under visible irradiation. As a positive‐charge‐attracting magnet, under illumination, alkyne‐rich framework induces positive photogating effect on the neighboring MoS2, further enhancing photocurrent. Consequently, the device exhibits broadband detection (453–1064 nm) with a maximum responsivity of 78.5 A W−1 and a high speed of 50 µs. Results open up a new promising strategy using GDY toward effective junction for future optoelectronic applications.