Effect of MgO spacer and annealing on interface and magnetic properties of ion beam sputtered NiFe/Mg/MgO/CoFe layer structures J. Appl. Phys. 112, 063906 (2012) Reactive sputter deposition of pyrite structure transition metal disulfide thin films: Microstructure, transport, and magnetism J. Appl. Phys. 112, 054328 (2012) Strong free-carrier electro-optic response of sputtered ZnO films J. Appl. Phys. 112, 053514 (2012) Influence of capping layers on CoFeB anisotropy and damping J. Appl. Phys. 112, 053909 (2012) Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties Al 0.278 In 0.722 N thin films have been grown on p-type Si(001) and c-plane sapphire substrates by employing radio-frequency magnetron-sputter deposition at elevated temperatures. High-resolution x-ray diffraction, as well as pole-figure measurements, reveals no phase separation of the thin films. The Al 0.278 In 0.722 N film grown on p-Si(001) substrate is a typical fiber-texture with AlInN(0001)// Si(001) while that on the c-sapphire exhibits the onset of epitaxy. Microscopic studies reveal that the growth is dominated by a columnar mechanism and the average columnar grain diameter is about 31.5 and 50.8 nm on p-Si(001) and c-sapphire substrates, respectively. Photoluminescence at room-temperature exhibits a strong emission peak at 1.875 eV, smaller than the optical absorption edge (2.102 eV) but larger than the theoretical bandgap energy (1.70 eV), which is attributable to the band-filling effect, as is supported by the high electron density of 4.5 Â 10 20 cm À3 . The n-Al 0.278 In 0.722 N/p-Si(001) heterostructure is tested for solar cells and the results are discussed based on the I-V characteristics and their fittings. V C 2012 American Institute of Physics.
β-FeSi2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi2(220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi2(431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi2. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi2/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi2(431)/Si(001) is larger than that on the surface of β-FeSi2(220)/Si(111).
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