Effects of AlN thickness on structural and transport properties of In-rich n-AlInN/AlN/p-Si(0 0 1) heterojunctions grown by magnetron sputtering

Liu, H F; Dolmanan, S. B.; Tripathy, S.; Dalapati, Goutam Kumar; Tan, Chengcheh; Z, D

doi:10.1088/0022-3727/46/9/095106

Cited by 11 publications

(13 citation statements)

References 16 publications

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“…It also permits the deposition of polycrystalline films on large area substrates using a low cost process, but at the expense of delivering layers with lower crystal quality than those grown by MOVPE or MBE. The use of sputtering to deposit AlInN on a wide range of substrates, including sapphire, silicon, and quartz, and at different deposition temperatures has been reported by a number of groups [16][17][18][19][20][21][22][23][24][25][26][27]. A mixture of argon and nitrogen is usually used for the plasma generation.…”

Section: Introductionmentioning

confidence: 99%

In-rich Al_xIn_1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

Núñez-Cascajero¹,

Valdueza-Felip²,

Monteagudo-Lerma³

et al. 2017

J. Phys. D: Appl. Phys.

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The structural, morphological, electrical and optical properties of In-rich AlxIn1−xN (0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire are investigated as a function of the deposition parameters. The RF power applied to the aluminum target (0 W–150 W) and substrate temperature (300 °C–550 °C) are varied. X-ray diffraction measurements reveal that all samples have a wurtzite crystallographic structure oriented with the c-axis along the growth direction. The aluminum composition is tuned by changing the power applied to the aluminum target while keeping the power applied to the indium target fixed at 40 W. When increasing the Al content from 0 to 0.39, the room-temperature optical band gap is observed to blue-shift from 1.76 eV to 2.0 eV, strongly influenced by the Burstein–Moss effect. Increasing the substrate temperature, results in an evolution of the morphology from closely-packed columnar to compact. For a substrate temperature of 500 °C and RF power for Al of 150 W, compact Al0.39In0.61N films with a smooth surface (root-mean-square surface roughness below 1 nm) are produced.

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Section: Introductionmentioning

confidence: 99%

In-rich Al_xIn_1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

Núñez-Cascajero¹,

Valdueza-Felip²,

Monteagudo-Lerma³

et al. 2017

J. Phys. D: Appl. Phys.

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“…The analyses reveal an epitaxial relationship between the AlInN and AlN layers with the silicon substrate, which is 90° in-plane rotated from the most reported layer in the system, which is the following: (0001) [11][12][13][14][15][16][17][18][19][20] AlInN || (0001) [11][12][13][14][15][16][17][18][19][20] AlN || [112] Si.…”

Section: Discussionmentioning

confidence: 99%

“…Different techniques have been used to grow AlInN, such as metal-organic chemical vapor deposition (MOCVD) [ 10 , 11 , 12 ], molecular beam epitaxy (MBE) [ 13 , 14 , 15 , 16 ], and the sputtering technique [ 17 , 18 , 19 , 20 , 21 , 22 ]. Unlike MOCVD or MBE, the sputtering technique uses an electrical discharge to extract the target species, where the generated ions and atoms are provided with kinetic energy by the sputtering process itself, thus overcoming the phase separation issues related to the heating procedures.…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

et al. 2021

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Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

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“…AlxIn1-xN with a composition of x=0.83 grows lattice matched to GaN [3] increasing the applications of the material in high electron mobility transistors [4,5] and Bragg reflectors [6,7]. Other applications of AlxIn1-xN material is as active layer in multijunction solar cells [8][9][10]. In spite of the potential properties and applications of AlxIn1-xN, it is the least studied alloy among III-nitrides due to the difficulty of growing high-quality and single-phase layers because of the large differences between its binaries (InN and AlN) constituents: i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The growth of AlxIn1-xN layers has been reported by different growth techniques such as metal-organic chemical vapor deposition (MOCVD) [11,[15][16][17][18], molecular beam epitaxy (MBE) [19][20][21][22][23] and sputtering deposition [10,[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. The first two growth techniques allow the achievement of high crystal quality layers at high growth temperatures; but the use of the sputtering low cost technique, allows the deposition of polycrystalline layers at low temperatures, enabling the growth even on flexible substrates, thanks to the high kinetic energy of the ions involved in the growth process.…”

Section: Introductionmentioning

confidence: 99%

High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

Núñez-Cascajero

Blasco

Valdueza-Felip

et al. 2019

Materials Science in Semiconductor Processing

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High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300°C). Their structural, chemical and optical properties are investigated as a function of the growth temperature and type of substrate. X-ray diffraction measurements reveal that all samples have a wurtzite crystallographic structure oriented with the c-axis perpendicular to the substrate surface, without parasitic orientations. The layers preserve their Al content at 37 % for the whole range of studied growth temperature. The samples grown at low temperatures (RT and 100°C) are almost fully relaxed, showing a closely-packed columnar-like morphology with an RMS surface roughness below 3 nm. The optical band gap energy estimated for layers grown at RT and 100°C on sapphire and glass substrates is of ~2.4 eV while it red shifts to ~2.03 eV at 300°C. The feasibility of growing high crystalline quality AlInN at low growth temperature even on amorphous substrates open new application fields for this material like surface plasmon resonance sensors developed directly on optical fibers and other applications where temperature is a handicap and the material cannot be heated.

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Effects of AlN thickness on structural and transport properties of In-rich n-AlInN/AlN/p-Si(0 0 1) heterojunctions grown by magnetron sputtering

Cited by 11 publications

References 16 publications

In-rich Al_xIn_1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

In-rich Al_xIn_1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

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Effects of AlN thickness on structural and transport properties of In-rich n-AlInN/AlN/p-Si(0 0 1) heterojunctions grown by magnetron sputtering

Cited by 11 publications

References 16 publications

In-rich AlxIn1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

In-rich AlxIn1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

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In-rich Al_xIn_1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

In-rich Al_xIn_1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering