The exotic photophysical properties of organic-inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front-runners for next-generation non-volatile flash photomemory. However, the long photo-programming time of photomemory limits its application on light-fidelity (Li-Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo-responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti-solvent functionalities of the perovskite/PS-b-PEO composite film, thus allowing the solution-processable poly(3-hexylthiophene-2,5-diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo-induced charge transfer rate of 0.056 ns −1 , high charge transfer efficiency of 89%, ON/OFF current ratio of 10 4 , and extremely low programming time of 5 ms can be achieved. This solution-processable and fast photo-programmable non-volatile flash photomemory can trigger the practical application on Li-Fi.
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