Because of the increasing panel size, the difficulty on delivering the glass substrate has been enhanced dramatically and become a critical problem in the LCD manufacturing industry. Nowadays, most of panel fabrication factory utilize the fully-automated delivering technology instead of the traditional labor delivery for diminishing the possibility of polluted particles on the LCD board. Thus, this study investigates the flow patterns on maintaining the air quality inside the delivering facility with a moving elevator. Also, influence on the moving pattern of the elevator via numerical technique is the focus of this investigation. Firstly, CFD code Fluent is used to execute the CFD simulation and evaluate the flow patterns inside this delivery equipment. It is found that the inferior air is generated mainly by the increasing vortex inside the delivery equipment for an upward-moving elevator. On the contrary, the flow field becomes very smooth without obvious vortex phenomenon, and thus induces a better air quality when the elevator moves downward. However, a better uniform flow field occurred when the elevator is moving upward. In addition, the airflow uniformity is not effectively improved by reducing the elevator velocity and increasing the FFU airflow velocity. It is not evident for improving the pollute exclusion by reducing elevator moving velocity which slows down the transporting efficiency, so it is suggested that the moving speed of elevator should maintain at 0.16m/s. On another way, it is useful to enhance the capability of pollute exclusion by increasing the FFU’s air velocity, thus it is proposed to raise FFU velocity to 0.71m/s. Consequently, it is concluded that the moving pattern of elevator has an essential impact and can be utilized to improve the air quality inside the LCD delivery facility.
This theoretical investigation intends to study the nano-tunnel problem of the single electron transistor (SET), which is one of the most important components in the nano-electronics industry. With a combined effort of quantum mechanics and similarity parameter, the partial differential equation of transient position-probability density is attained and can be applied to predict the electron’s position inside the nano tunnel. Also, an appropriate set of the initial and the boundary conditions is set up in accordance to the actual electron behavior for solving this PDE of probability density function. Thereafter, a simple, closed-form solution for the probability density is obtained and expressed in terms of the error function for a new similarity variable η. Note that this analytic similarity solution is easy to perform the calculation and suitable for any further mathematical operation, such as the optimization applications. In addition, it is shown that these predications are reasonable and in good agreement to the physical meanings, which are evaluated from both microscopic and macroscopic viewpoints. In conclusions, this is an innovative approach by using the Schro¨dinger equation directly to solve the nano-tunnel problem. Moreover, with the aids of this analytic position-probability-density solution, it is illustrated that the free single electron in the SET’s tunnel can only appear at some specified regions, which are defined by a dimensionless parameter η within a range of 0 ≤ η ≤ 2. This result can be served as a valuable design reference for setting the practical manufacture requirement.
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