Abstract:This theoretical investigation intends to study the nano-tunnel problem of the single electron transistor (SET), which is one of the most important components in the nano-electronics industry. With a combined effort of quantum mechanics and similarity parameter, the partial differential equation of transient position-probability density is attained and can be applied to predict the electron’s position inside the nano tunnel. Also, an appropriate set of the initial and the boundary conditions is set up in accor… Show more
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