Herein, we report energy storage devices, which are based on densely packed, vertically aligned MoS2 (VA-MoS2) or planar oriented MoS2 (PO-MoS2) and compare their electrochemical performances. The VA-MoS2 films have been processed by chemical vapor deposition (CVD) to reach unprecedented micron-scale thick films while maintaining the vertical alignment for the whole thickness. The VA-MoS2 and the PO-MoS2 films form a high-performance Li-ion electrode, reaching the theoretical limits of reversible capacity for this material (800 mAh/g; twice the specific capacity of graphite). The vertical alignment allows faster charge-discharge rates while maintaining a high specific capacity (C-rate measurements). Noteworthy, the reversible cycling of the Li-ion electrode also benefits from the vertical alignment. In this article, we present the full synthesis, structural and electrochemical characterization of VA-MoS2 along with the properties of PO-MoS2 to deconvolute the intrinsic properties of MoS2 from the influence of the layers’ orientation.
Thin films of layered semiconductors emerge as highly promising materials for energy harvesting and storage, optoelectronics and catalysis. Their natural propensity to grow as oriented crystals and films is one of their distinct properties under recent focal interest. Specifically, the reaction of transition metal films with chalcogen vapor can result in films of vertically aligned (VA) layers, while metal-oxides react with chalcogens in vapor phase to produce horizontally aligned crystals and films. The growth mechanisms of vertically oriented films are not yet fully understood, as well as their dependence on the initial metal film thickness and growth conditions. Moreover, the resulting electronic properties and the role of defects and disorder had not yet been studied, despite their critical influence on catalytic and device performance. In this work, we study the details of oriented growth of MoS2 with complementary theoretical and experimental approaches. We present a general theoretical model of diffusion-reaction growth that can be applied to a large variety of layered materials synthesized by solid-vapor reaction. Moreover, we inspect the relation of electronic properties to the structure of vertically aligned MoS2 and shed light on the density and character of defects in this material. Our measurements on Si-MoS2 p-n hetero-junction devices point to the existence of polarizable defects that impact applications of vertical transition-metal dichalcogenide materials.
Molybdenum trioxide (MoO3), an important transition metal oxide (TMO), has been extensively investigated over the past few decades due to its potential in existing and emerging technologies, including catalysis, energy and data storage, electrochromic devices, and sensors. Recently, the growing interest in two-dimensional (2D) materials, often rich in interesting properties and functionalities compared to their bulk counterparts, has led to the investigation of 2D MoO3. However, the realization of large-area true 2D (single to few atom layers thick) MoO3 is yet to be achieved. Here, we demonstrate a facile route to obtain wafer-scale monolayer amorphous MoO3 using 2D MoS2 as a starting material, followed by UV–ozone oxidation at a substrate temperature as low as 120 °C. This simple yet effective process yields smooth, continuous, uniform, and stable monolayer oxide with wafer-scale homogeneity, as confirmed by several characterization techniques, including atomic force microscopy, numerous spectroscopy methods, and scanning transmission electron microscopy. Furthermore, using the subnanometer MoO3 as the active layer sandwiched between two metal electrodes, we demonstrate the thinnest oxide-based nonvolatile resistive switching memory with a low voltage operation and a high ON/OFF ratio. These results (potentially extendable to other TMOs) will enable further exploration of subnanometer stoichiometric MoO3, extending the frontiers of ultrathin flexible oxide materials and devices.
The intercalation of layered compounds opens up a vast space of new host–guest hybrids, providing new routes for tuning the properties of materials. Here, it is shown that uniform and continuous layers of copper can be intercalated within the van der Waals gap of bulk MoS2 resulting in a unique Cu–MoS2 hybrid. The new Cu–MoS2 hybrid, which remains semiconducting, possesses a unique plasmon resonance at an energy of ≈1eV, giving rise to enhanced optoelectronic activity. Compared with high‐performance MoS2 photodetectors, copper‐enhanced devices are superior in their spectral response, which extends into the infrared, and also in their total responsivity, which exceeds 104 A W−1. The Cu–MoS2 hybrids hold promise for supplanting current night‐vision technology with compact, advanced multicolor night vision.
Two-dimensional (2D) materials are believed to hold significant promise in nanoscale optoelectronics. While significant progress has been made in this field over the past decade, the ability to control charge carrier density with high spatial precision remains an outstanding challenge in 2D devices. We present an approach that simultaneously addresses the dual issues of charge-carrier doping and spatial precision based on a functional lithographic resist that employs methacrylate polymers containing zwitterionic sulfobetaine pendent groups for noncovalent surface doping of 2D materials. We demonstrate scalable approaches for patterning these polymer films via electron-beam lithography, achieving precise spatial control over carrier doping for fabrication of high-quality, all-2D, lateral p-n junctions in graphene. Our approach preserves all of the desirable structural and electronic properties of graphene while exclusively modifying its surface potential. The functional polymer resist platform and concept offers a facile route toward lithographic doping of graphene- and other 2D material-based optoelectronic devices.
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