Enhancing Light–Matter Interactions in MoS₂ by Copper Intercalation

Abstract

The intercalation of layered compounds opens up a vast space of new host–guest hybrids, providing new routes for tuning the properties of materials. Here, it is shown that uniform and continuous layers of copper can be intercalated within the van der Waals gap of bulk MoS2 resulting in a unique Cu–MoS2 hybrid. The new Cu–MoS2 hybrid, which remains semiconducting, possesses a unique plasmon resonance at an energy of ≈1eV, giving rise to enhanced optoelectronic activity. Compared with high‐performance MoS2 photodetectors, copper‐enhanced devices are superior in their spectral response, which extends into the infrared, and also in their total responsivity, which exceeds 104 A W−1. The Cu–MoS2 hybrids hold promise for supplanting current night‐vision technology with compact, advanced multicolor night vision.

Intercalation‐assisted massive phase transformation: The key to SHS synthesis?

“…At low concentrations, the intercalates occupy tetrahedral or octahedral spaces with sulfur coordination. With increasing concentration, intercalates tend to form a uniform layer in the vdW gaps, which increases the distance in the z direction of the host MoS 2 32 . Florence et al.…”

The Trends of In Situ Focused Ion Beam Technology: Toward Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale

“…Due to the advantages of real‐time observation of the sample fabrication process with nanoscale resolution, the FIB–SEM dual‐beam system has been applied to prepare TEM samples for various electron devices, including the logic, memory, and sensing devices. [ 31–35 ] However, as the complexity of the device structure continues to rise, the conventional FIB–SEM sample preparation method can no longer meet the needs of high‐quality TEM samples. New sample preparation methods for advanced device structures are developed.…”

“…[1][2][3][4][5][6] By TEM samples for various electron devices, including the logic, memory, and sensing devices. [31][32][33][34][35] However, as the complexity of the device structure continues to rise, the conventional FIB-SEM sample preparation method can no longer meet the needs of highquality TEM samples. New sample preparation methods for advanced device structures are developed.…”

Optoelectronics of Atomic Metal–Semiconductor Interfaces in Tin-Intercalated MoS2

“…In some cases, new plasmonic states that do not occur in either the metal or semiconductor alone can emerge at an MSI. 3,6,7 Transport of plasmonic hot carriers (HCs) at MSIs is considered to be a promising operating mechanism of future photovoltaic, photocatalysis, and photodetection devices. 4−8 The efficiency of such devices depends on the efficiency of HC injection that is limited by the Schottky barrier height and by the mean free path (MFP) of the HCs.…”