practical allowable power dissipation of approximately 100 W/cm 2 , and not by their size. The conclusion of this work is that MOSFET technology scaled to its practical limit in terms of size and power density will asymptotically reach the theoretical limits of scaling for charge-based devices.Most of the proposed beyond-CMOS replacement devices are very different from their CMOS counterparts, and often pass computational state variables (or tokens) other than charge. Alternative state variables include collective or single spins, excitons, plasmons, photons, magnetic domains, qubits, and various ordering parameters observed in solid state phase dynamics (e.g., ferromagnetic state). With the multiplicity of computational state variables and physical mechanisms employed in the new structures, it is necessary to find new ways to benchmark the technologies effectively. This requires a combination of existing benchmarks used for CMOS and new benchmarks which take into account the idiosyncrasies of the new device behavior. Even more challenging is to extend this process to consider new circuits and architectures beyond the Boolean architecture used by CMOS today. Architectural Requirements for a Competitive Logic DeviceCircuit designers and architects depend on the logic switch to exhibit specific desired characteristics to realize a wide range of applications, including [5]:

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