Problem statement:The amount of ionizing radiation that Bipolar Junction Transistor (BJT) devices encounter during their lifecycle degrades both of their functional and electrical parameter performances. The different radiation environments either in space, high energy physics experiments, nuclear environment or fabrication process as well as for standard terrestrial operation possess an impact on the devices. Approach: In this research, analytical studies of the effects of ionizing radiation introduced in Commercial-Off-The Shelf (COTS) NPN BJTs by 60 Co gamma (γ) rays had been performed. Results: It was observed that exposure of BJTs to 60 Co caused ionizing radiation damage. Ionizing radiation damage was caused mainly by excess charges trapped on or near the surfaces of their insulating layers and interfaces. This phenomenon reduced the minority carrier lifetime and thus, leading to a decrease in the current gain of the BJTs. Conclusion: This ionizing radiation effect was found to arouse either a permanent or temporarily damage in the devices depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The performance and degradation of selected BJT devices during irradiation with respect to total dose 60 Co were presented in this study.
Self-cleaning glasses became demanding for various advanced applications due to their manifold advantages. In this view, some tellurite glasses containing TiO2 nanoparticles with varying concentrations were synthesized using the standard melt-quenching. These glasses were transparent with a reddish appearance. The HRTEM images of the glasses showed the presence of ellipsoidal TiO2 NPs with sizes ranging from 9−22 nm and 5−9 nm along the major and minor axis, respectively. The lattice fringe pattern of the selected TiO2 NPs confirmed their anatase structure with a lattice spacing of 0.36 nm. The observed reduction in the water contact angle from 67.5° to 43.0° of the glasses indicated their hydrophilic nature. The high work of adhesion (0.101− 0.126 N.m-1 ) of the glasses revealed the strong interfacial attractive force between water and glass. It was demonstrated that by adjusting the TiO2 NPs contents the hydrophilic traits of the glassed can be tailored, indicating the suitability for self-cleaning applications.
Polytriarylamine (PTAA) is a promising yet trending organic semiconductor material in which has unique characteristics that are low-cost fabrication, flexible and stable in room condition. The unique characteristic of PTAA thin films have attracted researchers to explore more on its ability as future green technology solutions. In this works, the effect of annealing temperature towards PTAA thin films are focused. PTAA thin films is fabricated by solution processed technique and sintered onto the glass substrate by spin coating method. The spin coating speed are 1000 RPM to 5000 RPM. The PTAA thin films are further annealed for an hour with temperatures of 80 oC, 120 oC and 150 oC. It is shown that grain size of thin films are increasing as the temperature increased based on XRD analysis. As for 1000 to 5000 RPM, the highest grain size obtain are 26.46 nm, 31.34 nm, 37.19 nm, 39.96 nm and 42.72 nm, respectively. Optical characteristic also reveals that band gap energy value is perpendicular to the increasing in temperature obtain from the UV-Vis spectrum. The results strongly show that annealing temperature had significantly affected both structural and optical properties of PTAA thin films.
Cu-based conductive oxide such as CuGaO2 is seen to be a promising transparent p-type oxide material. The study of p-type semiconductor CuGaO2 thin films have been carried out to investigate the effects of different parameters in providing the optimum result in achieving good optical transparency and conductivity of the thin film. The CuGaO2 thin films were fabricated on quartz substrate via the Radio Frequency (RF) magnetron sputtering technique with varying substrate temperatures and different annealing temperatures. The p-type thin films were deposited at a temperature ranging from room temperature, 100°C, 200°C and 300°C. The samples were also annealed varying from temperature of 500°C, 600°C, 700°C and 800°C. The fabricated sample were characterized using X-ray diffraction (XRD), UV-Visible spectroscopy, and atomic force microscope (afm). XRD showed a peak at 2θ = 36.10° (012). The optical transparency values achieved from UV-Vis spectrometer were seen to be approximately 80% and the bandgaps were found to be in the range of 3.34-3.43 eV which is in line with the bandgap value from the research on CuGaO2 thin films. From the afm, the mean surface roughness increases with increasing temperature and this is due to the increment of grain size. The highest grain size was observed at substrate temperature of 200°C.
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