Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode

Bakar, M. H. Abu; Li, Lam Mui; Mohamad, Khairul Anuar; Yassin, Fouziah Md; Pien, Chee Fuei; Alias, Afishah; Uesugi, Katsuhiro

doi:10.1166/asl.2017.10329

Cited by 4 publications

(3 citation statements)

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“…Due to the self-compensation effect, p-type TCMs are difficult to achieve by p-type doping of wide-bandgap n-type oxides (Ga 2 O 3 and ZnO, etc) [9]. The Cu(I)-based multibasic oxides such as CuMO 2 (M: Al, Cr, Sc, etc) [10,11], Sr 2 Cu 2 O [12], LaCuOCh (Ch: S and Se) [13,14], show very promising results, but their optical or electrical properties are hardly comparable to those of n-type TCMs. Nevertheless, their preparation processes require a high growth temperature (>400 °C), which greatly increases the preparation cost and makes them difficult to be applied in organic devices.…”

Section: Introductionmentioning

confidence: 99%

Highly transparent and conductive p-type CuI films by optimized solid-iodination at room temperature

Luo

Gong

et al. 2021

Nanotechnology

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p-type CuI films with optimized optoelectronic performance were synthesized by solid-phase iodination of Cu3N precursor films at room temperature. The effects of the deposition power of Cu3N precursors on the structural, electrical, and optical properties of the CuI films were systematically investigated. X-ray diffraction results show that all the CuI films possess a zinc-blende structure. When the deposition power of Cu3N precursors was 140 W, the CuI films present a high transmittance above 84% in the visible region, due to their smaller root-mean-square roughness values of 9.23 nm. Moreover, these films also have a low resistivity of 1.63 × 10–2 Ω·cm and a boosted figure of merit of 140.7 MΩ−1. These results are significant achievements among various p-types TCOs, confirming the promising prospects of CuI as a p-type transparent semiconductor applied in transparent electronics.

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Section: Introductionmentioning

confidence: 99%

Highly transparent and conductive p-type CuI films by optimized solid-iodination at room temperature

Luo

Gong

et al. 2021

Nanotechnology

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“…We can clearly see that the proposed photovoltaic configuration has a much superior responsivity than its photoconductive counterpart, which is due to the improved charge separation in the p-n junction and reduced recombination of the charge carriers. Furthermore, our proposed device demonstrates outstanding performance in comparison with the previous similar thin-film UV photodetectors such as the ones proposed in the works of Tonooka et al with Mg-doped CuCrO2 as the p-type and ZnO as the n-type materials 56 or Bakar et al with CuGaO2 and ZnO thin films 57 . We can see in Fig.…”

Section: Resultsmentioning

confidence: 69%

An All-sputtered Photovoltaic Ultraviolet Photodetector Based on Co-doped CuCrO2 and Al-doped ZnO Heterojunction

Ahmadi

Abrari

Ghanaatshoar

2021

Preprint

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We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO2 thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p-n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of ~41000, responsivity of 1.645 mA/W, and a detectivity of 3.52×1012 Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.

show abstract

“…We can clearly see that the proposed photovoltaic configuration has a much superior responsivity than its photoconductive counterpart, which is due to the improved charge separation in the p–n junction and reduced recombination of the charge carriers. Furthermore, our proposed device demonstrates outstanding performance in comparison with the previous similar thin-film UV photodetectors such as the ones proposed in the works of Tonooka et al with Mg-doped CuCrO 2 as the p-type and ZnO as the n-type materials 65 or Bakar et al with CuGaO 2 and ZnO thin films 66 . We can see in Fig.…”

Section: Resultsmentioning

confidence: 69%

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

Ahmadi

Abrari

Ghanaatshoar

2021

Sci Rep

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We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO2 thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p–n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of ~ 41,000, responsivity of 1.645 mA/W, and a detectivity of 3.52 × 1012 Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.

show abstract

Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO₂ Transparent Heterojunction Diode

Cited by 4 publications

References 0 publications

Highly transparent and conductive p-type CuI films by optimized solid-iodination at room temperature

Highly transparent and conductive p-type CuI films by optimized solid-iodination at room temperature

An All-sputtered Photovoltaic Ultraviolet Photodetector Based on Co-doped CuCrO2 and Al-doped ZnO Heterojunction

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

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