Global-warming issues coupled with high oil prices have become a major driving force for the use of advanced solar power technology, where a key component lies in the development of high-efficiency and low-cost photovoltaic cells. Next generation photovoltaics, hence, demand an efficiency-boosting mechanism in order to render solar energy cost competitive with conventional sources of electricity.[1] Fundamentally, the conversion efficiency of a solar cell depends on the photon absorption, carrier separation, and carrier collection. [2,3] Therefore, an effective antireflection (AR) coating, minimized recombination loss, and good Ohmic contacts are particularly important. Metal grids that inevitably block the transmission of solar energy also require optimization in order to reduce the series resistance. The trade-off between the electrode and the AR coating areas is one of the efficiency-limiting factors in a conventional solar cell.The conventional AR coating is usually composed of a quarter wavelength stack of dielectrics with different refractive indices. Broad angular and spectral AR is achievable at the price of multiple layers.[ [4][5][6][7] Over the past few years, versatile subwavelength structures (SWS) have emerged as promising candidates for AR coatings, due to the characteristics of zero-order gratings, or the so-called moth-eye effects. [8][9][10][11][12][13][14] However, the fabrication costs, which involve either electron-beam (e-beam) lithography or various etching processes, can be significant. In addition, the resulting surface-recombination loss due to dry or wet etching could further hinder the applications of SWS in commercial solar cells. Recently, multiple studies have been carried out on indium tin oxide (ITO), titanium dioxide (TiO 2 ), and silicon dioxide (SiO 2 ) nanostructures employing oblique-angle deposition methods, [15][16][17] where the refractive indices of the nanoporous materials can be engineered by adjusting the air volume ratio. Still, the materials require multiple layers to effectively suppress the Fresnel reflection.In this paper, we demonstrate a practical photovoltaic application of ITO nanocolumns serving as a conductive AR layer for GaAs solar cells. As in standard GaAs cells, the use of a nanostructured AR layer could be otherwise limited due to severe front-surface recombination. The characteristic ITO nanocolumns, prepared by glancing-angle deposition with an incident nitrogen flux, offer omnidirectional and broad-band AR properties for both s-and p-polarizations, up to an incidence angle of 708 for the 350-900 nm wavelength range. Calculations based on a rigorous coupled-wave analysis (RCWA) method indicate that the superior AR characteristics arise from the tapered column profiles, which collectively function as a graded-refractive-index layer. The conversion efficiency of the GaAs solar cell with the nanocolumn AR layer increases by 28% compared to a cell without any AR treatment. Moreover, nearly 42% enhancement is achieved for photocurrents generated at wavele...
Characteristic formation of highly oriented indium-tin-oxide (ITO) nanocolumns is demonstrated using electron-beam evaporation with an obliquely incident nitrogen flux. The nanocolumn material exhibits broadband and omnidirectional antireflective characteristics up to an incidence angle of 70° for the 350–900 nm wavelength range for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis indicate that the superior antireflection arises from the tapered column profiles which collectively function as a gradient-index layer. Since the nanocolumns have a preferential growth direction which follows the incident vapor flux, the azimuthal and polarization dependence of reflectivities are also investigated. The single ITO nanocolumn layer can function as antireflection contacts for light emitting diodes and solar cells.
In this paper, distinctive indium-tin-oxide (ITO) nanorods are employed to serve as buried electrodes for polymer-based solar cells. The embedded nanoelectrodes allow three-dimensional conducting pathways for low-mobility holes, offering a highly scaffolded cell architecture in addition to bulk heterojunctions. As a result, the power conversion efficiency of a polymer cell with ITO nanoelectrodes is increased to about 3.4% and 4.4% under one-sun and five-sun illumination conditions, respectively, representing an enhancement factor of up to ∼10% and 36% compared to a conventional counterpart. Also, the corresponding device lifetime is prolonged twice as much to about 110 min under five-sun illumination.
The blood-brain barrier (BBB) represents a significant impediment to a large variety of central nervous system-active agents. In the current study, we applied fluorescent polystyrene nanospheres (20 nm) to study the BBB permeability following cerebral ischemia and reperfusion. A microdialysis probe was implanted in the cerebral cortex of an anesthetized rat injected with fluorescent polystyrene nanospheres. The circulating nanospheres extravasating to the brain extracellular fluids were collected by the probe. Fluorescence intensity in the microdialysates throughout the course of cerebral ischemia/reperfusion was measured. Cerebral ischemia and reperfusion induced transient accumulations of extracellular nanospheres in the brain. The accumulation of nanospheres may result from their extravasation from the blood vessels. The concurrent cerebral oxygen levels monitored using oxygen-dependent quenching of phosphorescence decreased following ischemia and returned to their original levels after reperfusion. In conclusion, we demonstrated that high temporal resolution measurements of BBB permeability in vivo can be obtained using fluorescence polystyrene nanospheres and that these data correlate with changes of cerebral oxygen concentration. This present investigation indicates that nanoparticles have potential clinical applications involving drug delivery and determination of therapeutic efficacy and on-site diagnosis.
This paper presents a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods which serve as an omnidirectional transparent conductive layer (TCL) for InGaN/GaN light emitting diodes (LEDs). The characteristic nanorods, prepared by oblique electron-beam evaporation in a nitrogen ambient, demonstrate high optical transmittance (T>90%) for the wavelength range of 450nm to 900nm. The light output power of a packaged InGaN/GaN LED with the incorporated nanorod layer is increased by 35.1% at an injection current of 350mA, compared to that of a conventional LED. Calculations based on a finite difference time domain (FDTD) method suggest that the extraction enhancement factor can be further improved by increasing the thickness of the nanorod layer, indicating great potential to enhance the luminous intensity of solid-state lighting devices using ITO nanorod structures.
Mst3, a human Ste20-like protein kinase, has been recently demonstrated to undergo a caspase-mediated cleavage during apoptosis. The proteolytic cleavage of the C-terminus of Mst3 caused nuclear translocation of its kinase domain. This work provides evidence that Mst3 may contain a bipartite-like nuclear localization sequence (NLS) at the C-terminus of its kinase domain (residues 278-292). The removal of NLS from the kinase domain of Mst3 led to the cytoplasmic accumulation of EGFP-Mst3 D277 . The presence of nuclear exporting signals in the Mst3 was also demonstrated by leptomycin B-treatment and serial deletion of the C-terminal regulatory domain of Mst3. A nuclear export signal was also postulated to be in the regions of amino acids 335-386. In conclusion, Mst3 contains both NLS and NES signals, which may cooperate to control the subcellular distribution of Mst3.
Sub-wavelength antireflective structures are fabricated on a silicon nitride passivation layer of a Ga₀.₅In₀.₅P/GaAs/Ge triple-junction solar cell using polystyrene nanosphere lithography followed by anisotropic etching. The fabricated structures enhance optical transmission in the ultraviolet wavelength range, compared to a conventional single-layer antireflective coating (ARC). The transmission improvement contributes to an enhanced photocurrent, which is also verified by the external quantum efficiency characterization of the fabricated solar cells. Under one-sun illumination, the short-circuit current of a cell with sub-wavelength structures is enhanced by 46.1% and 3.4% due to much improved optical transmission and current matching, compared to cells without an ARC and with a conventional SiN(x) ARC, respectively. Further optimizations of the sub-wavelength structures including the periodicity and etching depth are conducted by performing comprehensive calculations based on a rigorous couple-wave analysis method.
In this paper, we present evidence of balanced electron and hole transport in polymer-fullerene based solar cells by means of embedded indium-tin-oxide nanoelectrodes. Enabled by a controllable electrochemical deposition, the individual nanoelectrodes are uniformly enclosed by a poly͑3,4-ethylenedioxythiophene͒ hole-conducting layer, allowing a relatively short route for holes to reach the anode and hence increasing the effective hole mobility. Consequently, the power conversion efficiency and photogenerated current are maximized with a deposition condition of 50 C, where the ratio of the electron to hole mobility is nearly unity.
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