Articles you may be interested inEffects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Characteristic formation of highly oriented indium-tin-oxide (ITO) nanocolumns is demonstrated using electron-beam evaporation with an obliquely incident nitrogen flux. The nanocolumn material exhibits broadband and omnidirectional antireflective characteristics up to an incidence angle of 70° for the 350–900 nm wavelength range for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis indicate that the superior antireflection arises from the tapered column profiles which collectively function as a gradient-index layer. Since the nanocolumns have a preferential growth direction which follows the incident vapor flux, the azimuthal and polarization dependence of reflectivities are also investigated. The single ITO nanocolumn layer can function as antireflection contacts for light emitting diodes and solar cells.

This paper presents a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods which serve as an omnidirectional transparent conductive layer (TCL) for InGaN/GaN light emitting diodes (LEDs). The characteristic nanorods, prepared by oblique electron-beam evaporation in a nitrogen ambient, demonstrate high optical transmittance (T>90%) for the wavelength range of 450nm to 900nm. The light output power of a packaged InGaN/GaN LED with the incorporated nanorod layer is increased by 35.1% at an injection current of 350mA, compared to that of a conventional LED. Calculations based on a finite difference time domain (FDTD) method suggest that the extraction enhancement factor can be further improved by increasing the thickness of the nanorod layer, indicating great potential to enhance the luminous intensity of solid-state lighting devices using ITO nanorod structures.

We have systematically studied the self-organization of poly(3-hexylthiophene) (P3HT), an electrochromic material, upon control of the solvent evaporation rate. We characterized these polymer films using atomic force microscopy and X-ray diffraction measurements. Well-ordered P3HT structures were developed after solvent annealing; these highly crystalline structures exhibited enhanced electrochromic contrast and reduced resistance within the film, leading to larger coloration efficiencies and faster switching times. The optical contrast (Delta%T), coloration efficiency, and switching time of the P3HT films increased from 54.2%, 182.6 cm(2) C(-1), and 5.3 s, respectively, prior to solvent annealing to 64.8%, 293.5 cm(2) C(-1), and 3.2 s, respectively, after application of the solvent-annealing conditions.