We demonstrate a new, to the best of our knowledge, dimensional “horizontal optimization” scheme, which can improve the high-speed characteristics of a PIN photodetector by designing the incident optical field distribution. First, coaxially incident faculae with the same peak and same power are studied and simulated, revealing that the bandwidth of the photodetector illuminated by uniform light is higher than that of the device illuminated by nonuniform light. Next, an annular optical field is designed incident to the photodetector, and the bandwidth is further improved. For a PIN photodetector, by carefully optimizing the incident optical field distribution, the photodetector bandwidth under an annular optical field can be increased significantly compared with that under conventional coaxial illumination.
The effect of the incident-light field distribution on the electric-field and carrier distribution in the UTC-PD photoabsorption layer is analyzed, and a 10-μm UTC-PD achieved 3dB-bandwidth 69.88GHz under 1V bias, increased about 12%.
We propose and optimize a parallel structure PIN photodetector by using a obconical shape surrounded by a ring-shaped V-groove trench to improve the PD performance. The bandwidth- efficiency product is increased by 67.89% with the construction.
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