Measures of electrical conductance, especially the index of sympathovagal balance, may be used as valuable supplementary diagnostic methods for selective intervention in patients with acute renal colic.
High absorptivity and low emissivity are characteristics needed in an ideal solar selective absorber. In high-temperature applications, such as a solar concentration power system in which the solar surface works under a long-term high temperature (about 400 to 800 °C), the absorber material has to maintain high absorption in the visible region, high reflectance in the infrared region, and excellent thermal stability at high temperature. In this research, the design of a molybdenum-based (Mo-based) solar selective absorber was analyzed by the admittance locus method, and the films were deposited by magnetron sputtering. The ratio of the extinction coefficient to the refractive index of the Mo layer was close to 1, so that the Mo-based solar selective absorber had a broad absorption band, high absorption, and good solar selectivity. Its average reflectance in the visible region was less than 0.4%. The experimental absorption was 97.1% (simulated absorption was 98%) and the emissivity was from 13% to 20% (simulated emissivity was 8% to 26%) as the temperature increased from 400 to 800 °C.
WO3 thin film was prepared on glass substrate at room temperature by RF magnetron sputtering deposition with hybrid (Ar+2.5% H2) gas. Effects of RF power on the microstructure, electrical and optical properties of WO3 films are investigated by field emission scanning electron microscopy, X-ray diffraction, Hall measurement and spectrometer. X-ray diffraction analysis reveals that all of the films are amorphous. The minimum resistivity of the WO3 film prepared with RF 70W is 5.74 × 10-3 -cm. The average transmittance in the visible region was decreased with increased RF power from 50W to 150W. The average transmittance was lower than 15% with RF 50W. The electrical and optical mechanisms have been explained in terms of composition and film thickness were changed with RF power.
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