Silicon photonic integrated circuits (PICs) show great potential for many applications. The phase tuning technique is indispensable and of great importance in silicon PICs. An optical phase shifter with balanced overall performance on power consumption, insertion loss, footprint, and modulation bandwidth is essential for harnessing large-scale integrated photonics. However, few proposed phase shifter schemes on various platforms have achieved a well-balanced performance. In this Letter, we experimentally demonstrate a thermo-optic phase shifter based on a densely distributed silicon spiral waveguide on a silicon-on-insulator platform. The phase shifter shows a well-balanced performance in all aspects. The electrical power consumption is as low as 3 mW to achieve a
π
phase shift, the optical insertion loss is 0.9 dB per phase shifter, the footprint is
67
×
28
µ
m
2
under a standard silicon photonics fabrication process without silicon air trench or undercut process, and the modulation bandwidth is measured to be 39 kHz.
We demonstrate a high-performance graphene-silicon slot-waveguide electro-optic micro-ring modulator featuring a record modulation efficiency of 10.99 V-1µm-1 with a 33-dB extinction ratio, 8-µm-long graphene and a modulation bandwidth of >40 GHz.
We show in simulation a 2-um graphene on silicon suspended electro-optic (E/O) modulator based on slot microring resonator working at critical coupling that shows dramatically increased speed while keeping big modulation depth.
We experimentally demonstrate a thermo-optic phase shifter based on a densely distributed silicon spiral waveguide, with power consumption, insertion loss, footprint and modulation bandwidth of 3 mW/π, 0.9 dB, 28×67 μm2 and 39 kHz respectively.
We experimentally demonstrate a compact silicon optical phase shifter based on thermo-optic effect. The loss, power consumption, modulation bandwidth, and footprint are 0.77 dB, 3.1 mW/π, 38 kHz, and 45 × 45 µm2, respectively.
Electro-optic (E/O) modulators are crucial for optical communication but face a trade-off between modulation bandwidth and efficiency. A small footprint could reduce the capacitance and increase the bandwidth. However, this usually results in low modulation efficiency. We address this trade-off by embedding a partially overlapped double-layer graphene on a silicon slot waveguide into an integrated micro-ring modulator. The modulator achieves a modulation bandwidth exceeding 40 GHz with an ultrahigh modulation efficiency of 10.99 V-1µm-1, which is an order of magnitude higher than state-of-the-art E/O modulators. We also demonstrate high reproducibility of the graphene modulator. The compact, highly efficient, and highly reproducible graphene E/O modulator has the potential to enable large-scale graphene photonic integrated circuits, facilitating a broad range of applications such as optical interconnects, optical neural networks, and programmable photonic circuits.
We demonstrated a hybrid integrated 2-µm electro-optic (E/O) modulator based on graphene-silicon slot-waveguide microring resonator, with 4 dB modulation depth and >20 GHz modulation bandwidth.
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