Paraffin wax (PW) is widely used for smart thermoregulation materials due to its good thermal performance. However, the leakage and low thermal conductivity of PW hinder its application in the heat storage field. Accordingly, developing effective methods to address these issues is of great importance. In this study, we explored a facile approach to obtain PW-loaded core-sheath structured flexible nanofibers films via coaxial electrospinning technique. The PW as the core layer was successfully encapsulated by the sheath-layer poly(methyl methacrylate). The diameter of the fiber core increased from 395 to 848 nm as the core solution speed rate increased from 0.1 to 0.5 mL/h. In addition, it can be seen that higher core solution speed rate could lead to higher PW encapsulation efficiency according to the transmission electron microscopy results. The core-sheath nanofiber films, moreover, possessed the highest latent heat of 58.25 J/g and solidifying enthalpy of -56.49 J/g. In addition, we found that after 200 thermal cycles, there was little change in latent heat, which demonstrated that it is beneficial for the PW-loaded core-sheath structure to overcome the leakage issue and enhance thermal stability properties for the thermoregulation film.
Layered hexagonal γ-GeSe, a new polymorph of GeSe synthesized recently, shows strikingly high electronic conductivity in its bulk form (even higher than graphite) while semiconducting in the case of monolayer (1L). In this work, by using first-principles calculations, we demonstrate that, different from its orthorhombic phases of GeSe, the γ-GeSe shows a small spatial anisotropic dependence and a strikingly thickness-dependent behavior with transition from semimetal (bulk, 0.04 eV) to semiconductor (1L, 0.99 eV), and this dual conducting characteristic realized simply with thickness control in γ-GeSe has not been found in other 2D materials before. The lacking of d-orbital allows charge carrier with small effective mass (0.16 m0 for electron and 0.23 m0 for hole) which is comparable to phosphorene. Meanwhile, 1L γ-GeSe shows a superior flexibility with Young's modulus of 86.59 N/m, only one-quarter of that of graphene and three-quarters of that of MoS2, and Poisson's ratio of 0.26, suggesting a highly flexible lattice. Interestingly, 1L γ-GeSe shows an in-plane isotropic elastic modulus inherent with hexagonal symmetry while an anisotropic in-plane effective mass owing to shifted valleys around the band edges. We demonstrate the feasibility of strain engineering in inducing indirect-direct and semiconductor-metal transitions resulting from competing bands at the band edges. Our work shows that the free 1L γ-GeSe shows a strong light absorption (~10^6 cm-1) and an indirect bandgap with rich valleys at band edges, enabling high carrier concentration and a low rate of direct electron-hole recombination which would be promising for nanoelectronics and solar cell applications.
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