In this paper, we studied WVTR(water vapor transmission rate) properties of Si3N4 thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below 80℃, the Si3N4 thin films were deposited at room temperature. The Si3N4 thin films were prepared with the process conditions: SiH4 and N2, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/㎡/day at process conditions. The best preparation condition for Si3N4 thin film to get the best WVTR property of 0.05 gm/㎡/day were SiH4:N2 gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 ㎜, TCP power of 500 W and film thickness of 200 ㎚. respectively. The proposed results indicates that the Si3N4 thin film could replace metal or glass as encapsulation for flexible OLED.
In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of SiO 2 thin film using TCP-CVD equipment. We obtained a excellent SiO 2 thin film which has a excellent uniformity (<1 [%]), deposition rate (0.28 [μm/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions (SiH 4 : O 2 =50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at 300 [ o C].
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