Deposition of SiO₂Thin Film for the Core of Planar Light-Wave-Guide by Transformer Coupled Plasma Chemical-Vapor-Deposition

Abstract

In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of SiO 2 thin film using TCP-CVD equipment. We obtained a excellent SiO 2 thin film which has a excellent uniformity (＜1 [%]), deposition rate (0.28 [μm/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions (SiH 4 : O 2 =50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at 300 [ o C].