We have demonstrated a novel three-dimensional multibridge-channel metal-oxide-semiconductor field-effect transistor (MBCFET). This transistor was successfully fabricated using a conventional complementary metal-oxide-semiconductor process. We introduce the fabrication technologies and electrical characteristics of MBCFET in comparison with a conventional planar MOSFET. The MBCFET has more benefits than a conventional MOSFET. It shows 4.6 times larger current drivability than a planar MOSFET. This is due to the vertically stacked multibridge channels. The subthreshold swing of MBCFET is 61 mV/dec, which is almost an ideal value due to the thin body surrounded by gate. Based on a simulation result, we show that the MBCFET will have a large on-off state current ratio at short channel transistors.Index Terms-Multibridge-channel metal-oxide-semiconductor field-effect transistor (MBCFET), vertically stacked multibridge channels.
A 90 nm generation logic technology with Cu / low-k interconnects is reported. SOnm transistors are employed gate oxide with 1.3 nm in thickness and operating at 1.0 V. High speed transistors have drive currents of 870 pA/pm and 360 pA/pm for NMOS and PMOS respectively, while generic transistors have currents of 640 pA/pm and 260 pA/pm respectively. Low power process using high-k gate dielectrics and SO1 process are also provided in this technology. The low-k SiOC material with 2.9 in the.k value is used for 9 layers of dual damascene Cu / low-k interconnects. The effective k (ken) value of interconnect is about 3.6. Fully working 6-T S U M cell with an area of 1.1 pm2 and SNM value of 330mV is obtained. For MIM capacitor, voltage coefficient of capacitance is less than 20 ppmiv.
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