Articles you may be interested inUltraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts J. Appl. Phys. 116, 083108 (2014); 10.1063/1.4894251 Comparative study of ultraviolet detectors based on ZnO nanostructures grown on different substrates J. Appl. Phys. 112, 074510 (2012); 10.1063/1.4757619 Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector Appl. Phys. Lett. 99, 261102 (2011); 10.1063/1.3672030High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation A metal-semiconductor-metal ͑MSM͒ structure ultraviolet ͑UV͒ photodetector has been designed and fabricated on chemical vapor deposition grown diamond and its performance has been characterized. A concept was envisioned of creating a new process by which 1 m small gap spacing was achieved. This kind of detector can be operated at a lower bias voltage with a higher photoresponsivity in the UV range. The success of this device depended on the bilayer metal electrodes, good Ohmic contact, image reversal technique, direct writing process, and sacrificial layer technology. Current-voltage and capacitance-voltage characteristics, photoresponsivity, and quantum efficiency of planar MSM structures with Au/Ti-diamond contacts are presented.
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