Conceptual development and characterization of a diamond-based ultraviolet detector

Abstract

Articles you may be interested inUltraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts J. Appl. Phys. 116, 083108 (2014); 10.1063/1.4894251 Comparative study of ultraviolet detectors based on ZnO nanostructures grown on different substrates J. Appl. Phys. 112, 074510 (2012); 10.1063/1.4757619 Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector Appl. Phys. Lett. 99, 261102 (2011); 10.1063/1.3672030High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation A metal-semiconductor-metal ͑MSM͒ structure ultraviolet ͑UV͒ photodetector has been designed and fabricated on chemical vapor deposition grown diamond and its performance has been characterized. A concept was envisioned of creating a new process by which 1 m small gap spacing was achieved. This kind of detector can be operated at a lower bias voltage with a higher photoresponsivity in the UV range. The success of this device depended on the bilayer metal electrodes, good Ohmic contact, image reversal technique, direct writing process, and sacrificial layer technology. Current-voltage and capacitance-voltage characteristics, photoresponsivity, and quantum efficiency of planar MSM structures with Au/Ti-diamond contacts are presented.

Radiation detection devices made from CVD diamond

“…This is in agreement with several other studies that also demonstrate the strong detrimental effect of the grain boundaries on the detector sensitivity. Similar observations were also observed on coplanar surface devices under UV illumination, using varying distance between electrodes [21][22][23]. One alternative is therefore to use materials with larger grain sizes.…”

Nanoscale structure study of boron nitride nanosheets and development of a deep-UV photo-detector

“…1 Typically, high optical quality wide band gap semiconductors such as GaN, 2,3 ZnO, 4,5 SiC (ref. 6 and 7) and diamond 8,9 have been used for light detection in UV-A (400-320 nm) and UV-B (320-290 nm) spectral ranges. The light detection in the deep UV-C spectral range below 240 nm is only possible using III-nitride semiconductors like AlN, 10 AlGaN ternary alloys 11 or InAlGaN quaternary alloys.…”

High performance, flexible and room temperature grown amorphous Ga2O3 solar-blind photodetector with amorphous indium-zinc-oxide transparent conducting electrodes

“…Wide-band gap semiconductors are the promising materials to develop solar-blind photodetectors. Recently, AlGaN [7], ZnMgO [6,[8][9][10], diamond [11], LaAlO 3 [12], etc, have been used as solar-blind photodetector applications. However, band gap engineering using alloy formation of suitable materials makes this process more complex and create excessive defects that lead to reduce the performance of solar-blind photodetector [1,5,[13][14][15][16][17][18][19].…”