In this communication, we report on the synthesis of few atomic-layer boron nitride nanosheets (BNNSs) and their application for deep ultraviolet photo-detection. Synthesis of BNNSs is carried out by using the short-pulse plasma beam deposition technique. High-resolution tunneling electron microscopy, cathodoluminescence spectroscopy and photo-stimulated measurements are conducted and linked to characterize the BNNS morphology. The obtained BNNSs are flat with a typical size of 50 × 50 μm(2) and are optically transparent down to 210 nm. Nanoscale studies by transmission electron microscopy revealed that these nanosheets are composed of a densely packed honeycomb crystal lattice structure of covalently bonded boron and nitrogen atoms. Cathodoluminescence spectroscopy of these nanosheets revealed a single sharp excitonic peak centered at 233 nm at 300 K. The synthesized BNNSs are used to demonstrate applicability of BNNSs for detecting ultraviolet photons. The initial experimental tests of the developed prototype BNNSs based deep-ultraviolet photo-detector show that it is blind to photons with an energy less than 4 eV. The calculated output power of the detector is approximately 2 μW and the ratio between the output electrical power and the input optical power is ∼1%.

We report low-temperature synthesis of large-scale boron nitride nanosheets (BNNSs) and their applications for high-performance Schottky diode and gas sensor. Ten minutes of synthesis with a short-pulse-laser-produced plasma deposition technique yields a large amount of highly flat, transparent BNNSs. A basic reason for using short-pulse plasma beams is to avoid nanosheet thermal ablation or have low heat generated. Consequently, it greatly reduces the stress and yield large, flat BNNSs. The average size of obtained BNNS is around 10 μm and thickness is around 1.7 nm. Carbon element has been used for doping BNNSs and achieving BNNSs-based Schottky diode and gas sensing device. Typical current versus voltage characteristics of diode are examined. The breakdown reverse voltage is around -70 V. This probably indicates that the breakdown electric field of BNNSs-based diode is up to 1 × 10(8) V/cm. Sensing behavior of BNNSs-based gas sensor toward methane diluted with dry air is also characterized. The response time and recovery time are around 3 and 5 s at the operating temperature of 150 °C. Relatively, the sensor has poor sensitivity to oxygen gas.

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