Understanding and controlling charge and energy flow in state-of-the-art semiconductor quantum wells has enabled high-efficiency optoelectronic devices. Two-dimensional (2D) Ruddlesden-Popper perovskites are solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer thickness, which modulates the effective electron-hole confinement. We report that, counterintuitive to classical quantum-confined systems where photogenerated electrons and holes are strongly bound by Coulomb interactions or excitons, the photophysics of thin films made of Ruddlesden-Popper perovskites with a thickness exceeding two perovskite-crystal units (>1.3 nanometers) is dominated by lower-energy states associated with the local intrinsic electronic structure of the edges of the perovskite layers. These states provide a direct pathway for dissociating excitons into longer-lived free carriers that substantially improve the performance of optoelectronic devices.

Here, we present the fifth member (n = 5) of the Ruddlesden-Popper (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) nÀ1 Pb n I 3n+1 family, which we successfully synthesized in high yield and purity. Phase purity could be clearly determined from its X-ray powder diffraction patterns, which feature the (0k0) Bragg reflections at low 2q angles. The obtained pure n = 5 compound was confirmed to be a direct bandgap semiconductor with E g = 1.83 eV. The direct nature of the band gap is supported by density functional theory calculations. Intense photoluminescence was observed at room temperature at 678 nm arising from the band edge of the material. High-quality thin films can be prepared by the hot-casting method from solutions with a pure-phase compound as a precursor. The planar solar cells fabricated with n = 5 thin films demonstrate excellent power-conversion efficiency of 8.71% with an impressive open-circuit voltage of $1 V. Our results point to the use of layered perovskites with higher n numbers and pure chemical composition.

We present the new homologous series (C­(NH2)3)­(CH3NH3) n Pb n I3n+1 (n = 1, 2, 3) of layered 2D perovskites. Structural characterization by single-crystal X-ray diffraction reveals that these compounds adopt an unprecedented structure type, which is stabilized by the alternating ordering of the guanidinium and methylammonium cations in the interlayer space (ACI). Compared to the more common Ruddlesden–Popper (RP) 2D perovskites, the ACI perovskites have a different stacking motif and adopt a higher crystal symmetry. The higher symmetry of the ACI perovskites is expressed in their physical properties, which show a characteristic decrease of the bandgap with respect to their RP perovskite counterparts with the same perovskite layer thickness (n). The compounds show a monotonic decrease in the optical gap as n increases: E g = 2.27 eV for n = 1 to E g = 1.99 eV for n = 2 and E g = 1.73 eV for n = 3, which show slightly narrower gaps compared to the corresponding RP perovskites. First-principles theoretical electronic structure calculations confirm the experimental optical gap trends suggesting that the ACI perovskites are direct bandgap semiconductors with wide valence and conduction bandwidths. To assess the potential of the ACI perovskites toward solar cell applications, we studied the (C­(NH2)3)­(CH3NH3)3Pb3I10 (n = 3) compound. Compact thin films from the (C­(NH2)3)­(CH3NH3)3Pb3I10 compound with excellent surface coverage can be obtained from the antisolvent dripping method. Planar photovoltaic devices from optimized ACI perovskite films yield a power-conversion-efficiency of 7.26% with a high open-circuit voltage of ∼1 V and a striking fill factor of ∼80%.

In the fast-evolving field of halide perovskite semiconductors, the 2D perovskites (A′)2(A)n−1MnX3n+1 [where A = Cs+, CH3NH3+, HC(NH2)2+; A′ = ammonium cation acting as spacer; M = Ge2+, Sn2+, Pb2+; and X = Cl−, Br−, I−] have recently made a critical entry. The n value defines the thickness of the 2D layers, which controls the optical and electronic properties. The 2D perovskites have demonstrated preliminary optoelectronic device lifetime superior to their 3D counterparts. They have also attracted fundamental interest as solution-processed quantum wells with structural and physical properties tunable via chemical composition, notably by the n value defining the perovskite layer thickness. The higher members (n > 5) have not been documented, and there are important scientific questions underlying fundamental limits for n. To develop and utilize these materials in technology, it is imperative to understand their thermodynamic stability, fundamental synthetic limitations, and the derived structure–function relationships. We report the effective synthesis of the highest iodide n-members yet, namely (CH3(CH2)2NH3)2(CH3NH3)5Pb6I19 (n = 6) and (CH3(CH2)2NH3)2(CH3NH3)6Pb7I22 (n = 7), and confirm the crystal structure with single-crystal X-ray diffraction, and provide indirect evidence for “(CH3(CH2)2NH3)2(CH3NH3)8Pb9I28” (“n = 9”). Direct HCl solution calorimetric measurements show the compounds with n > 7 have unfavorable enthalpies of formation (ΔHf), suggesting the formation of higher homologs to be challenging. Finally, we report preliminary n-dependent solar cell efficiency in the range of 9–12.6% in these higher n-members, highlighting the strong promise of these materials for high-performance devices.

International audience2D Ruddlesden–Popper (RP) perovskites have recently emerged as promising candidates for hybrid perovskite photovoltaic cells, realizing power-conversion efficiencies (PCEs) of over 10% with technologically relevant stability. To achieve solar cell performance comparable to the state-of-the-art 3D perovskite cells, it is highly desirable to increase the conductivity and lower the optical bandgap for enhanced near-IR region absorption by increasing the perovskite slab thickness. Here, the use of the 2D higher member (n = 5) RP perovskite (n-butyl-NH3)2(MeNH3)4Pb5I16 in depositing highly oriented thin films from dimethylformamide/dimethylsulfoxide mixtures using the hot-casting method is reported. In addition, they exhibit superior environmental stability over thin films of their 3D counterpart. These films are assembled into high-efficiency solar cells with an open-circuit voltage of ≈1 V and PCE of up to 10%. This is achieved by fine-tuning the solvent ratio, crystal growth orientation, and grain size in the thin films. The enhanced performance of the optimized devices is ascribed to the growth of micrometer-sized grains as opposed to more typically obtained nanometer grain size and highly crystalline, densely packed microstructures with the majority of the inorganic slabs preferentially aligned out of plane to the substrate, as confirmed by X-ray diffraction and grazing-incidence wide-angle X-ray scattering mapping

State-of-the-art light-emitting diodes (LEDs) are made from high-purity alloys of III-V semiconductors, but high fabrication cost has limited their widespread use for large area solid-state lighting. Here, efficient and stable LEDs processed from solution with tunable color enabled by using phase-pure 2D Ruddlesden-Popper (RP) halide perovskites with a formula (CH (CH ) NH ) (CH NH ) Pb I are reported. By using vertically oriented thin films that facilitate efficient charge injection and transport, efficient electroluminescence with a radiance of 35 W Sr cm at 744 nm with an ultralow turn-on voltage of 1 V is obtained. Finally, operational stability tests suggest that phase purity is strongly correlated to stability. Phase-pure 2D perovskites exhibit >14 h of stable operation at peak operating conditions with no droop at current densities of several Amperes cm in comparison to mixtures of 2D/3D or 3D perovskites, which degrade within minutes.

Organic-inorganic perovskite photovoltaics are an emerging solar technology.Developing materials and processing techniques that can be implemented in large-scale manufacturing is extremely important for realizing the potential of commercialization. Here we report a hot-casting process with controlled Cl − incorporation which enables high stability and high power-conversionefficiencies (PCEs) of 18.2% for small area (0.09 cm 2 ) and 15.4% for largearea (≈1 cm 2 ) single solar cells. The enhanced performance versus tri-iodide perovskites can be ascribed to longer carrier diffusion lengths, improved uniformity of the perovskite film morphology, favorable perovskite crystallite orientation, a halide concentration gradient in the perovskite film, and reduced recombination by introducing Cl − . Additionally, Cl − improves the device stability by passivating the reaction between I − and the silver electrode. Highquality thin films deployed over a large-area 5 cm × 5 cm eight-cell module have been fabricated and exhibit an active-area PCE of 12.0%. The feasibility of material and processing strategies in industrial large-scale coating techniques is then shown by demonstrating a "dip-coating" process which shows promise for large throughput production of perovskite solar modules.

Developing dopant-free hole transporting layers (HTLs) is critical in achieving high-performance and robust state-of-the-art perovskite photovoltaics, especially for the air-sensitive tin-based perovskite systems. The commonly used HTLs require hygroscopic dopants and additives for optimal performance, which adds extra cost to manufacturing and limits long-term device stability. Here we demonstrate the use of a novel tetrakis-triphenylamine (TPE) small molecule prepared by a facile synthetic route as a superior dopant-free HTL for lead-free tin-based perovskite solar cells. The best-performing tin iodide perovskite cells employing the novel mixed-cation ethylenediammonium/formamidinium with the dopant-free TPE HTL achieve a power conversion efficiency as high as 7.23%, ascribed to the HTL's suitable band alignment and excellent hole extraction/collection properties. This efficiency is one of the highest reported so far for tin halide perovskite systems, highlighting potential application of TPE HTL material in low-cost high-performance tin-based perovskite solar cells.