Sikorski and Merkt Reply: Collective modes as suggested by Que in his Comment' are not of importance for the far-infrared resonances of our samples. Coulomb coupling between individual dots in our arrays is strongly suppressed by the metal Schottky gate which is in close proximity to the electron dots. Our observation that the resonance frequency does not depend on electron number ' is essentially described by a recent theorem of Brey, Johnson, and Halperin that also applies to quantum dots in a parabolic confining potential.
We report on the study of quantum wires and dots near the surface of lnSb that contain quasi-one-dimensional and zero-dimensional, i.e. discrete, electron systems. Both types of samples are derived from metal-oxide-semiconductor devices and make it possible to tune the electron number by a gate voltage. The laterally confining potential leads to the formation of one-dimensional sub-bands and to discrete levels respectively. Both are examined by far-infrared resonance spectroscopy. In order to attain a sufficiently high absorptance we fabricate the wires and dots by holographic lithography in arrays on macroscopic areas. Resonance energies of about 10 meV due to the lateral quantisation are found to be comparatively large because of the low conduction band mass of InSb. In particular, the influence of the narrow-gap band structure of lnSb and of the electron-electron interaction on the quantised levels is discussed.
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