Intersubband resonance in quasi one-dimensional inversion channels

Hansen, W.; Horst, Marc A. ter; Kotthaus, J. P.; Merkt, U.; Sikorski, Ch.; Ploog, K.

doi:10.1103/physrevlett.58.2586

Cited by 310 publications

(66 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…These fluctuations are a result of random quantum interference, which is inevitably present in Systems containing randomly distributed impurities. Alternatively, the quasi-1D subband structure has been studied by infrared spectroscopy 8 and by capacitive techniques. 9 Both also require a multiwire System to resolve the signal originating from the depopulation of subbands.…”

mentioning

confidence: 99%

Quantized conductance of magnetoelectric subbands in ballistic point contacts

et al. 1988

View full text Add to dashboard Cite

The two-terminal conductance of ballistic point contacts in the two-dimensional electron gas of a high-mobility GaAs/Al x Gai_^As heterostructure has been studied in quantizing electric and magnetic fields. The conductance is found to be quantized at multiples of e 2 /h, exclusively determined by the number of occupied magnetoelectric subbands in the constriction. The experiment provides the first direct demonstration of magnetic and electric depopulation of one-dimensional subbands in a single wire.The study of ballistic electron transport in small semiconductor devices is a rapidly developing field of research.'~5 Combining present-day microfabrication technology and advanced material growth techniques, such äs molecular-beam epitaxy, devices can be made through which electrons can travel with a minimal amount of impurity scattering. These Systems are ideal for the study of quantum transport, which occurs in devices with dimensions comparable to the wavelength of the carriers. A clear manifestation of quantum transport has been reported in Ref. 6. The two-terminal conductance of narrow and short ballistic constrictions (point contacts) in a two-dimensional electron gas (2D EG) changes in steps of 2e 2 /h, when the width is varied by means of a gate.Because of the ballistic transport in the constriction, a direct correspondence between the conductance and the number of occupied subbands in the constriction is observed, each subband contributing an amount 2e 2 /h to the conductance. This makes these devices very suitable for the study of the (quasi-)one-dimensional subband structure in narrow wires. This can be done either by electric depopulation, reducing the number of occupied subbands by decreasing the width (or the electron density) of the wire, or by magnetic depopulation. A perpendicular magnetic field forms hybrid magnetoelectric subbands, which can be depopulated by increasing the field.Electric depopulation in devices containing many identical parallel wires has been reported by Warren, Antoniadis, and Smith. 7 Many parallel wires were required to average out the irregulär resistance fluctuations that mask the structure due to the subband depopulation in a single wire. These fluctuations are a result of random quantum interference, which is inevitably present in Systems containing randomly distributed impurities. Alternatively, the quasi-1D subband structure has been studied by infrared spectroscopy 8 and by capacitive techniques. 9 Both also require a multiwire System to resolve the signal originating from the depopulation of subbands.Magnetic depopulation has been studied in single wires 10 '" by measuring the deviations from the \/B periodicity of the Shubnikov-de Haas resistance oscillations at low fields, the observation of which is also made difficult by the irregulär structure in the magnetoresistance. Moreover, it is not possible to determine the number of occupied subbands at zero field from the measurements.In the point contacts we study in this paper, the number of occupied subbands can be d...

show abstract

mentioning

confidence: 99%

Quantized conductance of magnetoelectric subbands in ballistic point contacts

et al. 1988

View full text Add to dashboard Cite

show abstract

“…Earlier plasmons in QW were investigated both theoretically [1,2,3,4,5] and experimentally [6,7,8]. In that papers it was shown that plasmons in QW possess some new unusual dispersion properties.…”

mentioning

confidence: 99%

Intrasubband plasmons in a weakly disordered array of quantum wires

Bludov

2003

Low Temperature Physics

View full text Add to dashboard Cite

Abstract. The paper deals with the theoretical investigation of plasmons in weakly disordered array of quantum wires, consisting of finite number of quantum wires, arranged at an equal distance from each other. The array of quantum wires is characterized by the fact that the density of electrons of one "defect" quantum wire was different from that of other quantum wires. At the same time it is assumed that "defect" quantum wire can be arranged at an arbitrary position in array. It is shown that the amount of plasmon modes in weakly disordered array of quantum wires is equal to the number of quantum wires in array. The existence of the local plasmon mode, whose properties differ from those of usual modes, is found. We point out that the local plasmon mode spectrum is slightly sensitive to the position of "defect" quantum wire in the array. At the same time the spectrum of usual plasmon modes is shown to be very sensitive to the position of "defect" quantum wire.

show abstract

“…In contrast to the previously described techniques field-effect-induced lateral potentials can be tuned during the measurement. So far there are no optical investigations of field effect induced one-or zero-dimensional structures because the lateral gate structure samples used for far-infrared (FTR) spectroscopy [7] or transport measurements [8] are not functional under illumination with Light of an energy greater then the bandgap of GaAs. However, there are many observations of the influence of vertical electric fields on the optical properties of GaAsIAlGaAs quantum well structures ~9][10] [11].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of quantum wells with a field-effect-induced lateral superlattice

Peters

Hansen

Kotthaus

et al. 1993

Le Journal de Physique IV

Self Cite

View full text Add to dashboard Cite

Abstract:A new developed stacked gate technique and a special MBE-grown quantum well structure is used to investigate the optical properties of a quantum well in a field effect induced lateral superlattice potential. Gate voltages applied at two different gates allow to tune both the superlattice potential amplitude as well as the energetical position with respect to the Fermienergy. The luminescence and luminescence excitation spectra show a strong dependence on these voltages. At certain gate voltage configurations electrons are filled into the minima of the lateral potential and form an array of quasi one-dimensional electron channels. At this point the luminescence splits into distinct peaks reflecting the lateral separation of photo excited electrons and holes. Excitation measurements illustrate the existence of occupied electron channels and unoccupied barriers between them.

show abstract

Intersubband resonance in quasi one-dimensional inversion channels

Cited by 310 publications

References 13 publications

Quantized conductance of magnetoelectric subbands in ballistic point contacts

Quantized conductance of magnetoelectric subbands in ballistic point contacts

Intrasubband plasmons in a weakly disordered array of quantum wires

Optical properties of quantum wells with a field-effect-induced lateral superlattice

Contact Info

Product

Resources

About