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In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.

Metal organic frameworks (MOFs) are crystalline three-dimensional porous solids featuring a high surface area, which have attracted considerable attention in a wide range of applications e.g. in catalysis, hydrogen storage, gas separation, thermoelectric applications or as chemical sensors. Beyond solvothermal synthesis of bulk MOF crystals, growing MOFs thin films has been limited so far to rather conventional solution-based techniques. However, traditional growth methods from solution such as spin-coating, spray-coating or dip-coating generate MOFs thin films with a rather low film quality and an alarming lack of a precise film thickness control under 1 nm. This renders them unsuitable for most industrial applications and severely limits their future application potential. Atomic layer deposition (ALD) provides this capability, but is limited by the necessity to use gaseous precursors in vacuum conditions at temperatures typically above 100°C. This is incompatible with the typically high temperature sensitivity of many hybrid metal-organic compounds such as the MOFs. In this perspective, we have transferred the principles of ALD to precursors dissolved in liquid solvents. The ‘solution ALD’ (sALD) method can be implemented in a variety of microfluidic or slot-die processing devices. We have demonstrated that the principles of classical, gas-based ALD —self-limiting surface reactions— are reproduced in sALD. sALD shares the fundamental properties of standard ‘gas ALD’ (gALD), in particular the self-limiting surface chemistry and the ability to coat deep pores in a conformal manner Furthermore, sALD allows the experimentalist to design new, advantageous, reactions of known semiconductors (oxides, heavier chalcogenides), or to deposit materials otherwise inaccessible to ALD altogether, such as polymers, ionic solids, and metal-organic frameworks. They may be obtained in highly pure, crystalline form at room temperature, either as planar films or as conformal coatings of porous substrates. Based on these advances, we have been able to make the first sALD-derived films of a MOF, Cu-BDC. At any chosen thickness, sALD MOF films feature significantly lower roughness and better adhesion than those generated by the best spray-coating and dip-coating methods available currently.