These authors contributed equally to this work.The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO 3 (LAO) and TiO 2 -terminated SrTiO 3 (STO) 1,2 . Transport and other measurements in this system display a plethora of diverse physical phenomena 3-14 . To better understand the interface conductivity, we used scanning superconducting quantum interference device (SQUID) microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in highly conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed upon thermal cycling above the STO cubic to tetragonal structural transition temperature, implying that local conductivity is strongly modified by STO tetragonal domain

The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, only single transistors bare of any circuit functionality have been realized from complex oxides. Here, monolithically‐integrated n‐type metal‐oxide‐semiconductor logic circuits are reported that utilize the two‐dimensional electron liquid generated at the LaAlO3/SrTiO3 interface. Providing the capability to process the signals of functional oxide devices such as sensors directly on oxide chips, these results illustrate the practicability and the potential of oxide electronics.

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from

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