Visible and near-IR photoluminescence (PL) is reported from sub-10 nm silicon nanopillars. Pillars were plasma etched from single crystal Si wafers and thinned by utilizing strain-induced, self-terminating oxidation of cylindrical structures. PL, lifetime, and transmission electron microscopy were performed to measure the dimensions and emission characteristics of the pillars. The peak PL energy was found to blue shift with narrowing pillar diameter in accordance with a quantum confinement effect. The blue shift was quantified using a tight binding method simulation that incorporated the strain induced by the thermal oxidation process. These pillars show promise as possible complementary metal oxide semiconductor compatible silicon devices in the form of light-emitting diode or laser structures.

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We report the observation of plasmonic modes of annular resonators in nanofabricated Ag and Au surfaces that are imaged by spectrally resolved cathodoluminescence. A highly focused 30 keV electron beam is used to excite localized surface plasmons that couple to collective resonant modes of the nanoresonators. We demonstrate unprecedented resolution of plasmonic mode excitation and by combining these observations with full-field simulations find that cathodoluminescence in plasmonic nanostructures is most efficiently excited at positions corresponding to antinodes in the modal electric field intensity.

We investigate the radiative properties of plasmonic core-shell nanowire resonators and, using boundary element method calculations, demonstrate enhanced radiative decay rate by up to 3500 times in nanoscale compound semiconductor/metal cavities. Calculation of the local density of optical states enables identification of new types of modes in cavities with mode volumes on the order of 10(-4)(λ/n)(3). These modes dramatically enhance the radiative decay rate and significantly modify the polarization of far-field emission.