In this article, characterization of fully patterned zinc-tin oxide (ZTO)-based memristive devices with feature sizes as small as 25 µm2 is presented. The devices are patterned via lift-off with a platinum bottom contact and a gold-titanium top contact. An on/off ratio of more than two orders of magnitude is obtained without the need for electroforming processes. Set operation is a current controlled process, whereas the reset is voltage dependent. The temperature dependency of the electrical characteristics reveals a bulk-dominated conduction mechanism for high resistance states. However, the charge transport at low resistance state is consistent with Schottky emission. Synaptic properties such as potentiation and depression cycles, with progressive increases and decreases in the conductance value under 50 successive pulses, are shown. This validates the potential use of ZTO memristive devices for a sustainable and energy-efficient brain-inspired deep neural network computation.
This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the different states of IGZO-based devices. In this article, we demonstrate that resistive switching occurs due to the modulation of the Schottky barrier present at the bottom interface of the device. Furthermore, thermionic field emission and field emission regimes are identified as the dominant conduction mechanisms at the high resistive state of the device, while the bulk-limited ohmic conduction is found at the low resistive state. Due to the high complexity associated with creating compact models of resistive switching, a data-driven model is drafted taking systematic steps.
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