We report a new nano-switching ESD protection mechanism and dual-polarity Cu/Si x O y N z /W nano crossbar array ESD structures. Experiments show full ESD protection featuring fast response of 100pS, ultra low leakage of <2pA and ESD protection of >9A. New dispersed local ESD tunneling model and CMOS integration are reported.Index Terms -ESD protection, nano switching array.
This paper reports the first SONOS-based fieldprogrammable ESD protection concept and structure. Prototype in 130nm CMOS demonstrates wide ESD triggering tuning range of ~2V and ultra low leakage of 1.2pA. It enables post-Si onchip/in-system ESD design programmability for complex ICs.
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