Amorphous “diamond-like/quartz-like” composites a-(C:H/Si:O) constitute a novel class of diamond-related materials with a number of unique bulk and surface properties. Using a thermal imaging microscope we have determined the thermal conductivity (κs) of a-(C:H/Si:O) films deposited on Si(001) substrates. We have developed a calibration procedure which makes it possible to use this method for the evaluation of not only topographical variations in κs but also absolute values.

No abstract

No abstract

No abstract

We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottky contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-type and ptype contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties of the tungsten SiC interface. The n-type contacts have a reverse leakage current density of 4.1 x 10 -3 Acm -2 and the p-type contacts have a reverse leakage current density of 1.4 x 10 -7 Acm -2 at -10 V. The n-type contacts have an current-voltage (I-V) extracted effective r of 0.7 eV with an ideality factor of 1.2 and a capacitance-voltage (C-V) extracted 0Bn of 1.2 eV. The p-type contacts have an I-V extracted effective 9 of 1.8 eV with an ideality factor of 1.7. Non-ideal I-V and C-V characteristics may be due to surface damage during W-DLN deposition.