The switching performance of a Bipolar-Mode FET (BMFET) is examined and measured over a temperature range of from -184 'C to +197 'C. Data are presented which show the temperature variation of the rise and fall times, for both the current and voltage; the measured temperature dependence of the forward voltage drop is also presented. These data show that overall device switching performance is not improved for low temperature operation, and is degraded when operated at temperatures above morn temperature.
The sections in this article are
Forward Drop
Switching Speed and Controllable Switching Trajectories
Reverse Blocking
Device Failure
Device Paralleling
Lifetime Killing
Numerical Modeling of the IGBT
Further Research
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.