Temperature variation effects on the switching characteristics of bipolar mode FETs (BMFETs)

Abstract

The switching performance of a Bipolar-Mode FET (BMFET) is examined and measured over a temperature range of from -184 'C to +197 'C. Data are presented which show the temperature variation of the rise and fall times, for both the current and voltage; the measured temperature dependence of the forward voltage drop is also presented. These data show that overall device switching performance is not improved for low temperature operation, and is degraded when operated at temperatures above morn temperature.

Review of the State-of-the-Art in Power Electronics Suitable for 10-KW Military Power Systems

“…At this point, the invention of power devices that operate at cryogenic temperatures is still in an early stage. More research has been focused on examining the behavior of existing ambient power electronics device at low temperature [37][38][39][40][41][42][43][44][45]. The inventory of examined devices divides into minority carrier groups (SCRs, GTOs and power transistors), majority carrier MOSFETs, and the IGBT-MCT hybrids.…”

“…The switching characteristics of MOSFETs at LNT, such as turn-on, turn-off delays, and rise and fall times have been reported in the literature [39,44,45]. Unfortunately, these results correspond to specific test conditions and to a resistive load.…”

Elektrische Antriebe 4

“…Bei bipolaren Bauelementen nehmen dagegen die Schaltverluste aufgrund der abnehmenden Lebensdauer mit abnehmender Temperatur ab, allerdings steigen die Durchlaßverluste[55,685,686,768]. Stellglied und Netz wurden realitätsnahe simuliert, als Lastströme wurden auf Magnetband aufgezeichnete Ströme eines Drehstromlichtbogenofens eingespeist.…”