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High transparent and conductive CdO films were prepared using the activated reactive evaporation technique on Corning 7059 glass substrates. The film resistivity and transmittance were found to be influenced by the glow power of the discharge. Electron mobilities of 4-28cm2 V-' s -' and carrier density in t h e range 7.8 x 10'84.97 x 10'' cm-3 were observed. The energy gap of the films calculated from the optical absorption measurements was 2.42 eV.

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Polycrystalline thin films of stoichiometric CdTe and Te doped high conductivity p-CdTe films have been prepared by an electron beam evaporation technique. The CdTe source material was doped with different Te wt.% and used as the starting material for preparation of p-CdTe films. The effect of Te concentration on structural, electrical and optical properties of the CdTe films were studied.