Characterisation of CdO thin films deposited by activated reactive evaporation

Reddy, K.T. Ramakrishna; Sravani, C.; Miles, Robert

doi:10.1016/s0022-0248(98)80215-7

Cited by 81 publications

(18 citation statements)

References 14 publications

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“…It is clear that, the prepared films have the <111> preferred orientation. This is in accordance with the reports on CdO films prepared by dc magnetron reactive sputtering [10], dc sputtering [19] and activated reactive evaporation [13,20,21]. It was found that the film preferred orientation depends on the deposition method used; the <120> orientation was reported in the ion beam sputtering [22] and spray pyrolysis films [9].…”

Section: Sample Characterizationsupporting

confidence: 90%

“…The XRD shows that the prepared CdO films has a cubic crystal structure with lattice parameter a = 4.69±0.02 Å. This is in agreement with other results [9,10,13]. The average g.s of <111> orientation grains of the studied polycrystalline film annealed at 300 o C is around 50nm, which is about 80% of the constituent oxide, while the average g.s of the CdO film annealed at 400 o C is 137nm.…”

Section: Sample Characterizationsupporting

confidence: 89%

“…Various techniques have been employed to prepare CdO thin films such as spray pyrolysis [9], sputtering [10,11], solution growth [12], activated reactive evaporation [13], pulsed laser sputtering [14] and sol-gel method [7]. In this paper CdO thin film was prepared by thermal evaporation technique.…”

Section: Introductionmentioning

confidence: 99%

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Optical characterization of thermally evaporated thin CdO films

Dakhel¹,

Henari

2003

Cryst. Res. Technol.

102

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Cadmium Oxide films have been prepared by vacuum evaporation method on a glass substrate at room temperature. Detailed structural, optical, and electrical properties of the films are presented at different annealing temperatures. The crystal structure of the samples was studied by X-ray diffraction. The spectral absorption coefficient of the CdO film at the fundamental absorption region (450-650nm) was determined using the spectral data of transmittance. The direct and indirect band gap energies were determined and found to be 2.33 eV and 1.95 eV respectively. The third order optical nonlinearities χ (3) of CdO films has been measured used the z-can technique. The real and imaginary parts of χ (3) have been measured at 514 nm and found to be 1.7x10-3 esu and 3.0x10 -3 esu, respectively.

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Section: Sample Characterizationsupporting

confidence: 90%

Section: Sample Characterizationsupporting

confidence: 89%

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Optical characterization of thermally evaporated thin CdO films

Dakhel¹,

Henari

2003

Cryst. Res. Technol.

102

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show abstract

“…The decreasing absorption edge shows the band gap at the time of annealing represented by hitch shift at the highest wavelength. The films are prepared by activation reactive evaporation method [31] and thermal evaporation method [32], shift on CdO was also observed. During annealing a reduction in band gap has also been observed for electrodeposited ZnO films from an aqueous bath [33].…”

Section: Results and Analysismentioning

confidence: 99%

Optical Properties of Cadmium Oxide (CdO) Thin Films

Ullah

Rahaman

Mahmud

2017

IJEECS

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“…Varieties of methods like dc reactive sputtering [Subramanyamet al, 2001], chemical bath deposition [Ocampoet al, 1994], activated reactive evaporation [K.T. Ramakrishna Reddy et al, 1998], solution growth [Verky and Fort, 1994], thermal oxidation [Ferrer, 1993], sol-gel [Galicia,2000], and spray pyrolysis have been reported in the preparation of SnO2 and ZnO thin films. The electro optical properties of ZnO make this material very convenient as a solar cell material [Ferro et al,2000].…”

Section: Introductionmentioning

confidence: 99%