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The reaction between Cu and the Sn-Ag solders doped with different amounts of Ni is studied. Four different solders with the Ag concentration fixed at 3.5 wt.% and Ni concentrations varied between 0.0 wt.% and 1.0 wt.% are used. In contrast to the reaction between Ni and the Sn-Ag solders doped with different amounts of Cu, the type of intermetallic compound formed does not depend on the Ni concentration. The compound Cu 6 Sn 5 forms for all the Ni concentrations used. For the Ni-doped solders, the Cu 6 Sn 5 phase contains a small amount of Ni. The compound Cu 3 Sn appears subsequently between Cu 6 Sn 5 and Cu as the reaction time increases. The addition of Ni has the effect of substantially increasing the amount of intermetallic compound at the interface. The addition of Ni also produces two distinct Cu 6 Sn 5 regions at the interface. The outer region contains more Ni, and the inner region contains less Ni. This study also finds that, during solid-state aging, the growth of Cu 3 Sn becomes slower when Ni is added to the solder. The findings of this study are rationalized using the Cu-Ni-Sn isotherm.

An electromigration failure mechanism in flip chip solder joints is reported in this communication. The solder joints failed by a very rapid, asymmetrical, and localized dissolution of the Cu metallization on the cathode side. The average dissolution rate was about 1 μm/min. The dissolved Cu included not only the Cu under bump metallurgy but also the on-chip Cu conducting trace. From the location and geometry of the dissolved Cu, it can be concluded that current crowding plays a critical role in the rapid dissolution. The dissolved Cu atoms were driven to the anode side by electromigration, and a large amount of Cu6Sn5 was formed there.

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