signal loss through the silicon substrate, and high power dissipation. In this paper, the small-signal substrate resistance effect in the drain node of common-source amplifiers has been investigated. For a cascade common-source amplifier, it was found that both the power gain and NF can be simultaneously improved when the floating-body method is adopted. Thus, the figure-of-merit Gain/NF ϫ P DC ratio has been improved by 25.1%. This circuit will be very useful for integration with other subcircuits in receiver ICs due to its power-saving merit and will provide another trade-off method between MOS and BJT topologies in BiCMOS processes. REFERENCES 1. J.D. Cressler, SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications, IEEE Trans Microwave Theory
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