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Stimulated emission ͑SE͒ was measured from ZnO thin films grown on c-plane sapphire by rf sputtering. Free exciton transitions were clearly observed at 10 K in the photoluminescence ͑PL͒, transmission, and reflection spectra of the sample annealed at 950°C. SE resulting from both exciton-exciton scattering and electron hole plasma formation was observed in the annealed samples at moderate excitation energy densities. The SE threshold energy density decreased with increasing annealing temperature up to ϳ950°C. The observation of low threshold exciton-exciton scattering-induced SE showed that excitonic laser action could be obtained in rf-sputtered ZnO thin films. At excitation densities below the SE threshold, time-resolved PL revealed very fast recombination times of ϳ74 ps at room temperature, and no significant change at 85 K. The decay time for the SE-induced PL was below the system resolution of Ͻ45 ps.

We report on the structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering, using transmission electron microscopy (TEM), high-resolution x-ray diffraction, and Rutherford backscattering spectroscopy (RBS) measurements. The ferromagnetic Mn-doped ZnO film showed magnetization hysteresis at 5 and 300K. A TEM analysis revealed that the Mn-doped ZnO included a high density of round-shaped cubic and elongated hexagonal MnZn oxide precipitates. The incorporation of Mn caused a large amount of structural disorder in the crystalline columnar ZnO lattice, although the wurtzite crystal structure was maintained. The observed ferromagnetism is discussed based on the structural characteristics indicated by TEM and the behavior of Mn when it is substituted into a ZnO lattice derived from RBS measurements.

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