Abstract:This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silicon-based electronics. This enthusiasm was spurred by high carbon nanotube carrier mobilities. However, nanotube production, placement, and control are all serious issues. Graphene, a thin sheet of graphitic carbon, can overcome some of these problems and therefore is a promising new electronic material.Although graphene devices have been built before, in this work we provide the first demonstration and systematic evaluation of arrays of a large number of transistors entirely produced using standard microelectronics methods. Graphene devices presented feature high-k dielectric, mobilities up to 5000 cm 2 /Vs and, I on /I off ratios of up to 7, and are methodically analyzed to provide insight into the substrate properties.Typical of graphene, these micron-scale devices have negligible band gaps and therefore large leakage currents.NOTE: This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessible.

No abstract

In the past decade, research has identified carbon-based electronics as a possible future alternative to silicon-based technology. We provide the first demonstration and systematic evaluation of a large number of epitaxial graphene transistors produced using standard micro-electronics methods. Graphene devices presented in this abstract feature a high-k dielectric, mobilities up to 5000 cm 2 /Vs, and I on /I off ratios of up to 7. Their characteristics are analyzed to provide insight into the substrate properties.Graphitic films on SiC substrates were prepared by solid-state decomposition of single crystal 4H-SiC ( )

It has been shown that few-layer graphene films can be grown by atmospheric chemical vapor deposition using deposited Ni thin films on SiO(2)/Si substrates. In this paper we report the correlation between the thickness variations of the graphene film with the grain size of the Ni film. Further investigations were carried out to increase the grain size of a polycrystalline nickel film. It was found that the minimization of the internal stress not only promotes the growth of the grains with (111) orientation in the Ni film, but it also increases their grain size. Different types of SiO(2) substrates also affect the grain size development. Based upon these observations, an annealing method was used to promote large grain growth while maintaining the continuity of the nickel film. Graphene films grown from Ni films with large versus small grains were compared for confirmation.