We report the progress of our work on the observation and the characterization of 87Rb vapor resonances in order to frequency-lock a 1529 nm DFB semiconductor laser. We present energy levels diagrams corresponding to the 5P312 -4D512 and 4D312 transitions of rubidium atoms, respectively at 1529.4 and 1529.3 nm (196.02 and 196.04 THz). Basic emission characteristics of our DFB laser are also given. We then show the absorption profiles of a probe laser emitting around 1529 nm while the 871tb vapor is optically pumped at 780.2 nm (D2 line at 384.2 THz) using a 30 mW A1GaAs laser. We finally present, for this experiment, the dependence of the probe laser absorption resonance depth and linewidth on the pump power.
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