Absrroct-This paper presents high-Q inductors processed on 500 Ohmrm silicon substrates using B mature three layer copper metallization. The fabricated inductors have been characterized with a wide banded Q maximum roughly centered at 2GHz. The maximum Q values range from Q. , = 14 for a 2OnH inductor up to Q, = 40 for a 0.5nH inductor. By means of a 1.5nH inductor the influence of metal tine width and different metallization stacks on the Q value vs. frequency behavior is presented. One typical application for these induelors are integrated passive bandpass filters for mobile phone applications. We present an ESD stable H3-bandpassfilter far PCNIPCS-applications with a low insertion loss of -1.45dB md high Jd harmonic suppression of at least -40dB. The circuit simulations have shown an excellent correlation to the S-parameter measurement data which avoid time consuming 3D field simulations leading to reduced time to market.
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